Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization
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arXiv
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866914711625269248 |
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| author | Garg, Chirag Filippou, Panagiotis Ch. Ikhtiar Ferrante, Yari Yang, See-Hun Hughes, Brian Rettner, Charles T. Phung, Timothy Faleev, Sergey Topuria, Teya Samant, Mahesh G. Jeong, Jaewoo Parkin, Stuart S. P. |
| author_facet | Garg, Chirag Filippou, Panagiotis Ch. Ikhtiar Ferrante, Yari Yang, See-Hun Hughes, Brian Rettner, Charles T. Phung, Timothy Faleev, Sergey Topuria, Teya Samant, Mahesh G. Jeong, Jaewoo Parkin, Stuart S. P. |
| contents | Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of the memory storage layer. Here we show that fast and highly reliable switching is possible using a very low magnetization ferrimagnetic Heusler alloy, Mn3Ge. Moreover, the tunneling magnetoresistance is the highest yet achieved for a ferrimagnetic material at ambient temperature. Furthermore, the devices were prepared on technologically relevant amorphous substrates using a novel combination of a nitride seed layer and a chemical templating layer. These results show a clear path to the lowering of switching currents using ferrimagnetic Heusler materials and, therefore, to the scaling of high performance magnetic random access memories beyond those nodes possible with ferromagnetic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_08112 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization Garg, Chirag Filippou, Panagiotis Ch. Ikhtiar Ferrante, Yari Yang, See-Hun Hughes, Brian Rettner, Charles T. Phung, Timothy Faleev, Sergey Topuria, Teya Samant, Mahesh G. Jeong, Jaewoo Parkin, Stuart S. P. Materials Science Magnetic random access memory that uses magnetic tunnel junction memory cells is a high performance, non-volatile memory technology that goes beyond traditional charge-based memories. Today its speed is limited by the high magnetization of the memory storage layer. Here we show that fast and highly reliable switching is possible using a very low magnetization ferrimagnetic Heusler alloy, Mn3Ge. Moreover, the tunneling magnetoresistance is the highest yet achieved for a ferrimagnetic material at ambient temperature. Furthermore, the devices were prepared on technologically relevant amorphous substrates using a novel combination of a nitride seed layer and a chemical templating layer. These results show a clear path to the lowering of switching currents using ferrimagnetic Heusler materials and, therefore, to the scaling of high performance magnetic random access memories beyond those nodes possible with ferromagnetic devices. |
| title | Ferrimagnetic Heusler tunnel junctions with fast spin-transfer torque switching enabled by low magnetization |
| topic | Materials Science |
| url | https://arxiv.org/abs/2403.08112 |