Kondo Effect in Micron Size Device Fabricated From Flakes of Mn Doped Bi2Se3 Topological Insulator

Fuente: arXiv
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Main Authors: Maurya, Vishal K., Tiwari, Jeetendra K., Ghosh, S., Patnaik, S.
Format: Preprint
Published: 2024
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_version_ 1866916158536417280
author Maurya, Vishal K.
Tiwari, Jeetendra K.
Ghosh, S.
Patnaik, S.
author_facet Maurya, Vishal K.
Tiwari, Jeetendra K.
Ghosh, S.
Patnaik, S.
contents Single crystals of Mn0.03Bi1.97Se3 were synthesized by modified Bridgman technique and phase purity was confirmed via XRD analysis. EDAX analysis has verified the stoichiometric ratio of elements in the sample. Sample flakes were transferred to the SiO2/Si n-type substrate by mechanical exfoliation technique. Four probe gold contacts were etched with the help of e-beam lithography by masking and lift off process. Resistivity measurement was performed in four probe configurations in 2-300 K temperature range. We report evidence for Kon-do effect in Mn0.03Bi1.97Se3 micro-flakes with Tmin of 14.4 K.
format Preprint
id arxiv_https___arxiv_org_abs_2403_08468
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Kondo Effect in Micron Size Device Fabricated From Flakes of Mn Doped Bi2Se3 Topological Insulator
Maurya, Vishal K.
Tiwari, Jeetendra K.
Ghosh, S.
Patnaik, S.
Mesoscale and Nanoscale Physics
Superconductivity
Single crystals of Mn0.03Bi1.97Se3 were synthesized by modified Bridgman technique and phase purity was confirmed via XRD analysis. EDAX analysis has verified the stoichiometric ratio of elements in the sample. Sample flakes were transferred to the SiO2/Si n-type substrate by mechanical exfoliation technique. Four probe gold contacts were etched with the help of e-beam lithography by masking and lift off process. Resistivity measurement was performed in four probe configurations in 2-300 K temperature range. We report evidence for Kon-do effect in Mn0.03Bi1.97Se3 micro-flakes with Tmin of 14.4 K.
title Kondo Effect in Micron Size Device Fabricated From Flakes of Mn Doped Bi2Se3 Topological Insulator
topic Mesoscale and Nanoscale Physics
Superconductivity
url https://arxiv.org/abs/2403.08468