Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process
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arXiv
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| Natura: | Preprint |
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2024
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| _version_ | 1866914714081034240 |
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| author | Rinella, Gianluca Aglieri Alocco, Giacomo Antonelli, Matias Baccomi, Roberto Beole, Stefania Maria Blidaru, Mihail Bogdan Buttwill, Bent Benedikt Buschmann, Eric Camerini, Paolo Carnesecchi, Francesca Chartier, Marielle Choi, Yongjun Colocci, Manuel Contin, Giacomo Dannheim, Dominik De Gruttola, Daniele Viera, Manuel Del Rio Dubla, Andrea di Mauro, Antonello Donner, Maurice Calvin Eberwein, Gregor Hieronymus Egger, Jan Fabbietti, Laura Feindt, Finn Gautam, Kunal Gernhaeuser, Roman Glover, James Julian Gonella, Laura Grodaas, Karl Gran Gregor, Ingrid-Maria Hillemanns, Hartmut Huth, Lennart Ilg, Armin Isakov, Artem Jones, Daniel Matthew Junique, Antoine Kaewjai, Jetnipit Keil, Markus Kim, Jiyoung Kluge, Alex Kobdaj, Chinorat Kotliarov, Artem Kittimanapun, Kritsada Křížek, Filip Kucharska, Gabriela Kushpil, Svetlana La Rocca, Paola Laojamnongwong, Natthawut Lautner, Lukas Lemmon, Roy Crawford Lemoine, Corentin Li, Long Librizzi, Francesco Liu, Jian Macchiolo, Anna Mager, Magnus Marras, Davide Martinengo, Paolo Masciocchi, Silvia Mattiazzo, Serena Menzel, Marius Wilm Mulliri, Alice Mylne, Mia Rose Piro, Francesco Rachevski, Alexandre Rasà, Marika Rebane, Karoliina Reidt, Felix Ricci, Riccardo Daza, Sara Ruiz Saccà, Gaspare Sanna, Isabella Sarritzu, Valerio Schlaadt, Judith Schledewitz, David Scioli, Gilda Senyukov, Serhiy Simancas, Adriana Snoeys, Walter Spannagel, Simon Šuljić, Miljenko Sturniolo, Alessandro Tiltmann, Nicolas Trifirò, Antonio Usai, Gianluca Vanat, Tomas Van Beelen, Jacob Bastiaan Varga, Laszlo Verdoglia, Michele Vignola, Gianpiero Villani, Anna Wennloef, Haakan Witte, Jonathan Wittwer, Rebekka Bettina |
| author_facet | Rinella, Gianluca Aglieri Alocco, Giacomo Antonelli, Matias Baccomi, Roberto Beole, Stefania Maria Blidaru, Mihail Bogdan Buttwill, Bent Benedikt Buschmann, Eric Camerini, Paolo Carnesecchi, Francesca Chartier, Marielle Choi, Yongjun Colocci, Manuel Contin, Giacomo Dannheim, Dominik De Gruttola, Daniele Viera, Manuel Del Rio Dubla, Andrea di Mauro, Antonello Donner, Maurice Calvin Eberwein, Gregor Hieronymus Egger, Jan Fabbietti, Laura Feindt, Finn Gautam, Kunal Gernhaeuser, Roman Glover, James Julian Gonella, Laura Grodaas, Karl Gran Gregor, Ingrid-Maria Hillemanns, Hartmut Huth, Lennart Ilg, Armin Isakov, Artem Jones, Daniel Matthew Junique, Antoine Kaewjai, Jetnipit Keil, Markus Kim, Jiyoung Kluge, Alex Kobdaj, Chinorat Kotliarov, Artem Kittimanapun, Kritsada Křížek, Filip Kucharska, Gabriela Kushpil, Svetlana La Rocca, Paola Laojamnongwong, Natthawut Lautner, Lukas Lemmon, Roy Crawford Lemoine, Corentin Li, Long Librizzi, Francesco Liu, Jian Macchiolo, Anna Mager, Magnus Marras, Davide Martinengo, Paolo Masciocchi, Silvia Mattiazzo, Serena Menzel, Marius Wilm Mulliri, Alice Mylne, Mia Rose Piro, Francesco Rachevski, Alexandre Rasà, Marika Rebane, Karoliina Reidt, Felix Ricci, Riccardo Daza, Sara Ruiz Saccà, Gaspare Sanna, Isabella Sarritzu, Valerio Schlaadt, Judith Schledewitz, David Scioli, Gilda Senyukov, Serhiy Simancas, Adriana Snoeys, Walter Spannagel, Simon Šuljić, Miljenko Sturniolo, Alessandro Tiltmann, Nicolas Trifirò, Antonio Usai, Gianluca Vanat, Tomas Van Beelen, Jacob Bastiaan Varga, Laszlo Verdoglia, Michele Vignola, Gianpiero Villani, Anna Wennloef, Haakan Witte, Jonathan Wittwer, Rebekka Bettina |
| contents | Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10-25 $μ$m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here the results from prototypes that feature direct analogue output of a 4$\times$4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using $^{55}$Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimisations. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_08952 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process Rinella, Gianluca Aglieri Alocco, Giacomo Antonelli, Matias Baccomi, Roberto Beole, Stefania Maria Blidaru, Mihail Bogdan Buttwill, Bent Benedikt Buschmann, Eric Camerini, Paolo Carnesecchi, Francesca Chartier, Marielle Choi, Yongjun Colocci, Manuel Contin, Giacomo Dannheim, Dominik De Gruttola, Daniele Viera, Manuel Del Rio Dubla, Andrea di Mauro, Antonello Donner, Maurice Calvin Eberwein, Gregor Hieronymus Egger, Jan Fabbietti, Laura Feindt, Finn Gautam, Kunal Gernhaeuser, Roman Glover, James Julian Gonella, Laura Grodaas, Karl Gran Gregor, Ingrid-Maria Hillemanns, Hartmut Huth, Lennart Ilg, Armin Isakov, Artem Jones, Daniel Matthew Junique, Antoine Kaewjai, Jetnipit Keil, Markus Kim, Jiyoung Kluge, Alex Kobdaj, Chinorat Kotliarov, Artem Kittimanapun, Kritsada Křížek, Filip Kucharska, Gabriela Kushpil, Svetlana La Rocca, Paola Laojamnongwong, Natthawut Lautner, Lukas Lemmon, Roy Crawford Lemoine, Corentin Li, Long Librizzi, Francesco Liu, Jian Macchiolo, Anna Mager, Magnus Marras, Davide Martinengo, Paolo Masciocchi, Silvia Mattiazzo, Serena Menzel, Marius Wilm Mulliri, Alice Mylne, Mia Rose Piro, Francesco Rachevski, Alexandre Rasà, Marika Rebane, Karoliina Reidt, Felix Ricci, Riccardo Daza, Sara Ruiz Saccà, Gaspare Sanna, Isabella Sarritzu, Valerio Schlaadt, Judith Schledewitz, David Scioli, Gilda Senyukov, Serhiy Simancas, Adriana Snoeys, Walter Spannagel, Simon Šuljić, Miljenko Sturniolo, Alessandro Tiltmann, Nicolas Trifirò, Antonio Usai, Gianluca Vanat, Tomas Van Beelen, Jacob Bastiaan Varga, Laszlo Verdoglia, Michele Vignola, Gianpiero Villani, Anna Wennloef, Haakan Witte, Jonathan Wittwer, Rebekka Bettina Instrumentation and Detectors Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10-25 $μ$m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here the results from prototypes that feature direct analogue output of a 4$\times$4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using $^{55}$Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimisations. |
| title | Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2403.08952 |