A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866911797738471424 |
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| author | Ye, Kevin Sadeghi, Ida Xu, Michael Van Sambeek, Jack Cai, Tao Dong, Jessica Kothari, Rishabh LeBeau, James M. Jaramillo, R. |
| author_facet | Ye, Kevin Sadeghi, Ida Xu, Michael Van Sambeek, Jack Cai, Tao Dong, Jessica Kothari, Rishabh LeBeau, James M. Jaramillo, R. |
| contents | We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photoconductive response and a lower density of extended defects, compared to alloy films made by direct growth. The perovskite structure is stable in high-selenium-content thin films with and without epitaxy. The manufacturing-compatible process of selenization in H2Se gas may spur the development of chalcogenide perovskite solar cell technology. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2403_09016 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange Ye, Kevin Sadeghi, Ida Xu, Michael Van Sambeek, Jack Cai, Tao Dong, Jessica Kothari, Rishabh LeBeau, James M. Jaramillo, R. Materials Science We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photoconductive response and a lower density of extended defects, compared to alloy films made by direct growth. The perovskite structure is stable in high-selenium-content thin films with and without epitaxy. The manufacturing-compatible process of selenization in H2Se gas may spur the development of chalcogenide perovskite solar cell technology. |
| title | A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange |
| topic | Materials Science |
| url | https://arxiv.org/abs/2403.09016 |