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Main Authors: Yang, Jiyuan, Wu, Jing, Li, Jingxuan, Zhou, Chao, Sun, Yang, Chen, Zuhuang, Liu, Shi
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2403.09426
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author Yang, Jiyuan
Wu, Jing
Li, Jingxuan
Zhou, Chao
Sun, Yang
Chen, Zuhuang
Liu, Shi
author_facet Yang, Jiyuan
Wu, Jing
Li, Jingxuan
Zhou, Chao
Sun, Yang
Chen, Zuhuang
Liu, Shi
contents The high coercive field ($E_c$) of hafnia-based ferroelectrics presents a major obstacle to their applications. The ferroelectric switching mechanisms in hafnia that dictate $E_c$, especially those related to domain nucleation in the Nucleation-Limited-Switching (NLS) model and domain wall motion in the Kolmogorov-Avrami-Ishibas (KAI) model, have remained elusive. We develop a deep-learning-assisted multiscale approach, incorporating atomistic insights into the critical nucleus, to predict both NLS- and KAI-type coercive fields. The theoretical NLS-type $E_c$ values agree with previous experimental results as well as our own measurements and also exhibit the correct thickness scaling for films between 3 and 20 nm. Combined theoretical and experimental investigations reveal that the giant $E_c$ in hafnia-based ferroelectrics arises from the ultra-thin geometry, which confines switching to the NLS mechanism. We predict that the theoretical lower limit for KAI-type $E_c$ is 0.1 MV/cm arsing from mobile domain walls. The activation of KAI-type switching to achieve lower $E_c$ is supported by our experimental demonstration of a low coercive field of 1 MV/cm in a 60 nm ferroelectric (HfO$_2$)$_n$/(ZrO$_2$)$_n$ ($n=3$ unit cells) superlattices. These findings establish a comprehensive framework for understanding ferroelectric switching in hafnia and highlight the potential of geometry and domain-wall engineering to achieve low-$E_c$ devices.
format Preprint
id arxiv_https___arxiv_org_abs_2403_09426
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Theoretical lower limit of coercive field in ferroelectric hafnia
Yang, Jiyuan
Wu, Jing
Li, Jingxuan
Zhou, Chao
Sun, Yang
Chen, Zuhuang
Liu, Shi
Materials Science
The high coercive field ($E_c$) of hafnia-based ferroelectrics presents a major obstacle to their applications. The ferroelectric switching mechanisms in hafnia that dictate $E_c$, especially those related to domain nucleation in the Nucleation-Limited-Switching (NLS) model and domain wall motion in the Kolmogorov-Avrami-Ishibas (KAI) model, have remained elusive. We develop a deep-learning-assisted multiscale approach, incorporating atomistic insights into the critical nucleus, to predict both NLS- and KAI-type coercive fields. The theoretical NLS-type $E_c$ values agree with previous experimental results as well as our own measurements and also exhibit the correct thickness scaling for films between 3 and 20 nm. Combined theoretical and experimental investigations reveal that the giant $E_c$ in hafnia-based ferroelectrics arises from the ultra-thin geometry, which confines switching to the NLS mechanism. We predict that the theoretical lower limit for KAI-type $E_c$ is 0.1 MV/cm arsing from mobile domain walls. The activation of KAI-type switching to achieve lower $E_c$ is supported by our experimental demonstration of a low coercive field of 1 MV/cm in a 60 nm ferroelectric (HfO$_2$)$_n$/(ZrO$_2$)$_n$ ($n=3$ unit cells) superlattices. These findings establish a comprehensive framework for understanding ferroelectric switching in hafnia and highlight the potential of geometry and domain-wall engineering to achieve low-$E_c$ devices.
title Theoretical lower limit of coercive field in ferroelectric hafnia
topic Materials Science
url https://arxiv.org/abs/2403.09426