TCAD Simulations of Humidity-Induced Breakdown of Silicon Sensors
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , , , , , , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2024
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866910856200060928 |
|---|---|
| author | Ninca, Ilona-Stefana Bloch, Ingo Bruers, Ben Fadeyev, Vitaliy Fernandez-Tejero, Xavi Jessiman, Callan Keller, John Stakely Klein, Christoph Thomas Koffas, Thomas Lacker, Heiko Markus Li, Peilin Scharf, Christian Staats, Ezekiel Ullan, Miguel Unno, Yoshinobu |
| author_facet | Ninca, Ilona-Stefana Bloch, Ingo Bruers, Ben Fadeyev, Vitaliy Fernandez-Tejero, Xavi Jessiman, Callan Keller, John Stakely Klein, Christoph Thomas Koffas, Thomas Lacker, Heiko Markus Li, Peilin Scharf, Christian Staats, Ezekiel Ullan, Miguel Unno, Yoshinobu |
| contents | The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field with relative humidity and the carrier densities towards breakdown in the periphery of p-bulk silicon sensors are investigated. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_09550 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | TCAD Simulations of Humidity-Induced Breakdown of Silicon Sensors Ninca, Ilona-Stefana Bloch, Ingo Bruers, Ben Fadeyev, Vitaliy Fernandez-Tejero, Xavi Jessiman, Callan Keller, John Stakely Klein, Christoph Thomas Koffas, Thomas Lacker, Heiko Markus Li, Peilin Scharf, Christian Staats, Ezekiel Ullan, Miguel Unno, Yoshinobu Instrumentation and Detectors The breakdown voltage of silicon sensors is known to be affected by the ambient humidity. To understand the sensor's humidity sensitivity, Synopsys TCAD was used to simulate n-in-p sensors for different effective relative humidities. Photon emission of hot electrons was imaged with a microscope to locate breakdown in the edge-region of the sensor. The Top-Transient Current Technique was used to measure charge transport near the surface in the breakdown region of the sensor. Using the measurements and simulations, the evolution of the electric field with relative humidity and the carrier densities towards breakdown in the periphery of p-bulk silicon sensors are investigated. |
| title | TCAD Simulations of Humidity-Induced Breakdown of Silicon Sensors |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2403.09550 |