Arapkina, L. V., Chizh, K. V., Uvarov, O. V., Voronov, V. V., Dubkov, V. P., Storozhevykh, M. S., . . . Yuryev, V. A. (2024). Extended defects as a source of phonon confinement in polycrystalline Si and Ge films.
Citazione stile Chigago Style (17a edizione)Arapkina, Larisa V., et al. Extended Defects as a Source of Phonon Confinement in Polycrystalline Si and Ge Films. 2024.
Citatione MLA (9a ed.)Arapkina, Larisa V., et al. Extended Defects as a Source of Phonon Confinement in Polycrystalline Si and Ge Films. 2024.
Attenzione: Queste citazioni potrebbero non essere precise al 100%.