Arapkina, L. V., Chizh, K. V., Uvarov, O. V., Voronov, V. V., Dubkov, V. P., Storozhevykh, M. S., . . . Yuryev, V. A. (2024). Extended defects as a source of phonon confinement in polycrystalline Si and Ge films.
Chicago Style (17th ed.) CitationArapkina, Larisa V., et al. Extended Defects as a Source of Phonon Confinement in Polycrystalline Si and Ge Films. 2024.
MLA (9th ed.) CitationArapkina, Larisa V., et al. Extended Defects as a Source of Phonon Confinement in Polycrystalline Si and Ge Films. 2024.
Warning: These citations may not always be 100% accurate.