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Extended defects as a source of phonon confinement in polycrystalline Si and Ge films

Fuente: arXiv

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Detalles Bibliográficos
Autores principales:	Arapkina, Larisa V., Chizh, Kirill V., Uvarov, Oleg V., Voronov, Valery V., Dubkov, Vladimir P., Storozhevykh, Mikhail S., Poliakov, Maksim V., Volkova, Lidiya S., Edelbekova, Polina A., Klimenko, Alexey A., Dudin, Alexander A., Yuryev, Vladimir A.
Formato:	Preprint
Publicado:	2024
Materias:	Materials Science
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

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