Electronic structure of above-room-temperature van der Waals ferromagnet Fe$_3$GaTe$_2$

Fuente: arXiv
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Main Authors: Lee, Ji-Eun, Yan, Shaohua, Oh, Sehoon, Hwang, Jinwoong, Denlinger, Jonathan D., Hwang, Choongyu, Lei, Hechang, Mo, Sung-Kwan, Park, Se Young, Ryu, Hyejin
Format: Preprint
Published: 2024
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author Lee, Ji-Eun
Yan, Shaohua
Oh, Sehoon
Hwang, Jinwoong
Denlinger, Jonathan D.
Hwang, Choongyu
Lei, Hechang
Mo, Sung-Kwan
Park, Se Young
Ryu, Hyejin
author_facet Lee, Ji-Eun
Yan, Shaohua
Oh, Sehoon
Hwang, Jinwoong
Denlinger, Jonathan D.
Hwang, Choongyu
Lei, Hechang
Mo, Sung-Kwan
Park, Se Young
Ryu, Hyejin
contents Fe$_3$GaTe$_2$, a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature ($\textit{T}$$_C$). In this study, we reveal the electronic structure of Fe$_3$GaTe$_2$ in its ferromagnetic ground state using angle-resolved photoemission spectroscopy and density functional theory calculations. Our results establish a consistent correspondence between the measured band structure and theoretical calculations, underscoring the significant contributions of the Heisenberg exchange interaction ($\textit{J}$$_{ex}$) and magnetic anisotropy energy to the development of the high-$\textit{T}$$_C$ ferromagnetic ordering in Fe$_3$GaTe$_2$. Intriguingly, we observe substantial modifications to these crucial driving factors through doping, which we attribute to alterations in multiple spin-splitting bands near the Fermi level. These findings provide valuable insights into the underlying electronic structure and its correlation with the emergence of high-$\textit{T}$$_C$ ferromagnetic ordering in Fe$_3$GaTe$_2$.
format Preprint
id arxiv_https___arxiv_org_abs_2403_09846
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Electronic structure of above-room-temperature van der Waals ferromagnet Fe$_3$GaTe$_2$
Lee, Ji-Eun
Yan, Shaohua
Oh, Sehoon
Hwang, Jinwoong
Denlinger, Jonathan D.
Hwang, Choongyu
Lei, Hechang
Mo, Sung-Kwan
Park, Se Young
Ryu, Hyejin
Materials Science
Fe$_3$GaTe$_2$, a recently discovered van der Waals ferromagnet, demonstrates intrinsic ferromagnetism above room temperature, necessitating a comprehensive investigation of the microscopic origins of its high Curie temperature ($\textit{T}$$_C$). In this study, we reveal the electronic structure of Fe$_3$GaTe$_2$ in its ferromagnetic ground state using angle-resolved photoemission spectroscopy and density functional theory calculations. Our results establish a consistent correspondence between the measured band structure and theoretical calculations, underscoring the significant contributions of the Heisenberg exchange interaction ($\textit{J}$$_{ex}$) and magnetic anisotropy energy to the development of the high-$\textit{T}$$_C$ ferromagnetic ordering in Fe$_3$GaTe$_2$. Intriguingly, we observe substantial modifications to these crucial driving factors through doping, which we attribute to alterations in multiple spin-splitting bands near the Fermi level. These findings provide valuable insights into the underlying electronic structure and its correlation with the emergence of high-$\textit{T}$$_C$ ferromagnetic ordering in Fe$_3$GaTe$_2$.
title Electronic structure of above-room-temperature van der Waals ferromagnet Fe$_3$GaTe$_2$
topic Materials Science
url https://arxiv.org/abs/2403.09846