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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2403.09912 |
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| _version_ | 1866929277959667712 |
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| author | Hocking, Marisa Henzinger, Christina E. Tran, Steven Pendharkar, Mihir Bittner, Nathan J. Watanabe, Kenji Taniguchi, Takashi Goldhaber-Gordon, David Mannix, Andrew J. |
| author_facet | Hocking, Marisa Henzinger, Christina E. Tran, Steven Pendharkar, Mihir Bittner, Nathan J. Watanabe, Kenji Taniguchi, Takashi Goldhaber-Gordon, David Mannix, Andrew J. |
| contents | New properties can arise at van der Waals (vdW) interfaces hosting a moiré pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure assembly, and even subtle variation in these structural parameters can create significant changes in the moiré period and emergent properties. Characterizing the rate of interlayer twist/strain relaxation during thermal annealing is critical to establish a thermal budget for vdW heterostructure construction and may provide a route to improve the homogeneity of the interface or to control its final state. Here, we characterize the spatial and temporal dependence of interfacial twist and strain relaxation in marginally-twisted hBN/hBN interfaces heated under conditions relevant to vdW heterostructure assembly and typical sample annealing. We find that the ferroelectric hBN/hBN moiré relaxes minimally during annealing in air at typical assembly temperatures of 170°C. However, at 400°C, twist angle relaxes significantly, accompanied by a decrease in spatial uniformity. Uniaxial heterostrain initially increases and then decreases over time, becoming increasingly non-uniform in direction. Structural irregularities such as step edges, contamination bubbles, or contact with the underlying substrate result in local inhomogeneity in the rate of relaxation. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_09912 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Thermal relaxation of strain and twist in ferroelectric hexagonal boron nitride moiré interfaces Hocking, Marisa Henzinger, Christina E. Tran, Steven Pendharkar, Mihir Bittner, Nathan J. Watanabe, Kenji Taniguchi, Takashi Goldhaber-Gordon, David Mannix, Andrew J. Materials Science New properties can arise at van der Waals (vdW) interfaces hosting a moiré pattern generated by interlayer twist and strain. However, achieving precise control of interlayer twist/strain remains an ongoing challenge in vdW heterostructure assembly, and even subtle variation in these structural parameters can create significant changes in the moiré period and emergent properties. Characterizing the rate of interlayer twist/strain relaxation during thermal annealing is critical to establish a thermal budget for vdW heterostructure construction and may provide a route to improve the homogeneity of the interface or to control its final state. Here, we characterize the spatial and temporal dependence of interfacial twist and strain relaxation in marginally-twisted hBN/hBN interfaces heated under conditions relevant to vdW heterostructure assembly and typical sample annealing. We find that the ferroelectric hBN/hBN moiré relaxes minimally during annealing in air at typical assembly temperatures of 170°C. However, at 400°C, twist angle relaxes significantly, accompanied by a decrease in spatial uniformity. Uniaxial heterostrain initially increases and then decreases over time, becoming increasingly non-uniform in direction. Structural irregularities such as step edges, contamination bubbles, or contact with the underlying substrate result in local inhomogeneity in the rate of relaxation. |
| title | Thermal relaxation of strain and twist in ferroelectric hexagonal boron nitride moiré interfaces |
| topic | Materials Science |
| url | https://arxiv.org/abs/2403.09912 |