Ultra-high endurance silicon photonic memory using vanadium dioxide

Fuente: arXiv
Guardado en:
Detalles Bibliográficos
Autores principales: Seoane, Juan José, Parra, Jorge, Navarro-Arenas, Juan, Recaman, María, Schouteden, Koen, Locquet, Jean Pierre, Sanchis, Pablo
Formato: Preprint
Publicado: 2024
Materias:
Acceso en línea:
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
_version_ 1866917909026045952
author Seoane, Juan José
Parra, Jorge
Navarro-Arenas, Juan
Recaman, María
Schouteden, Koen
Locquet, Jean Pierre
Sanchis, Pablo
author_facet Seoane, Juan José
Parra, Jorge
Navarro-Arenas, Juan
Recaman, María
Schouteden, Koen
Locquet, Jean Pierre
Sanchis, Pablo
contents Silicon photonics arises as a viable solution to address the stringent resource demands of emergent technologies, such as neural networks. Within this framework, photonic memories are fundamental building blocks of photonic integrated circuits that have not yet found a standardized solution due to several trade-off among different metrics such as energy consumption, speed, footprint, or fabrication complexity, to name a few. In particular, a photonic memory exhibiting ultra-high endurance performance (> 10^6 cycles) has been elusive to date. Here, we report an ultra-high endurance silicon photonic memory using vanadium dioxide (VO_2) exhibiting a record cyclability of up to 10^7 cycles without degradation. Moreover, our memory features an ultra-compact footprint below 5 μm with potential for nanosecond and picojoule programming performance. Our silicon photonic memory could find application in emerging photonic applications demanding high number of memory updates such as photonic neural networks with in-situ training.
format Preprint
id arxiv_https___arxiv_org_abs_2403_10162
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Ultra-high endurance silicon photonic memory using vanadium dioxide
Seoane, Juan José
Parra, Jorge
Navarro-Arenas, Juan
Recaman, María
Schouteden, Koen
Locquet, Jean Pierre
Sanchis, Pablo
Optics
Applied Physics
Silicon photonics arises as a viable solution to address the stringent resource demands of emergent technologies, such as neural networks. Within this framework, photonic memories are fundamental building blocks of photonic integrated circuits that have not yet found a standardized solution due to several trade-off among different metrics such as energy consumption, speed, footprint, or fabrication complexity, to name a few. In particular, a photonic memory exhibiting ultra-high endurance performance (> 10^6 cycles) has been elusive to date. Here, we report an ultra-high endurance silicon photonic memory using vanadium dioxide (VO_2) exhibiting a record cyclability of up to 10^7 cycles without degradation. Moreover, our memory features an ultra-compact footprint below 5 μm with potential for nanosecond and picojoule programming performance. Our silicon photonic memory could find application in emerging photonic applications demanding high number of memory updates such as photonic neural networks with in-situ training.
title Ultra-high endurance silicon photonic memory using vanadium dioxide
topic Optics
Applied Physics
url https://arxiv.org/abs/2403.10162