Role of Coulomb interaction in the valley photogalvanic effect
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arXiv
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| Auteurs principaux: | , , , |
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| Format: | Preprint |
| Publié: |
2024
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| _version_ | 1866909221968150528 |
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| author | Kovalev, V. M. Parafilo, A. V. Kibis, O. V. Savenko, I. G. |
| author_facet | Kovalev, V. M. Parafilo, A. V. Kibis, O. V. Savenko, I. G. |
| contents | We develop a theory of Coulomb interaction-related contribution to the photogalvanic current of the carriers of charge in two-dimensional non-centrosymmetric Dirac materials possessing a nontrivial structure of valleys and exposed to an external electromagnetic field. The valley photogalvanic effect occurs here due to the trigonal warping of electrons and holes' dispersions in a given valley of the monolayer. We study the low-frequency limit of the external field: The field frequency is smaller than the temperature $T$, and the electron-electron and electron-hole scattering times are much larger than the electron-impurity and hole-impurity scattering times. In this regime, we employ the Boltzmann transport equations and show that electron-hole scattering dominates electron-electron scattering in intrinsic semiconductors. A Coulomb electron-hole interaction-related contribution to the valley photogalvanic current can reduce the value of the bare photogalvanic current as electron and hole currents flow in opposite directions. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_10898 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Role of Coulomb interaction in the valley photogalvanic effect Kovalev, V. M. Parafilo, A. V. Kibis, O. V. Savenko, I. G. Mesoscale and Nanoscale Physics Optics We develop a theory of Coulomb interaction-related contribution to the photogalvanic current of the carriers of charge in two-dimensional non-centrosymmetric Dirac materials possessing a nontrivial structure of valleys and exposed to an external electromagnetic field. The valley photogalvanic effect occurs here due to the trigonal warping of electrons and holes' dispersions in a given valley of the monolayer. We study the low-frequency limit of the external field: The field frequency is smaller than the temperature $T$, and the electron-electron and electron-hole scattering times are much larger than the electron-impurity and hole-impurity scattering times. In this regime, we employ the Boltzmann transport equations and show that electron-hole scattering dominates electron-electron scattering in intrinsic semiconductors. A Coulomb electron-hole interaction-related contribution to the valley photogalvanic current can reduce the value of the bare photogalvanic current as electron and hole currents flow in opposite directions. |
| title | Role of Coulomb interaction in the valley photogalvanic effect |
| topic | Mesoscale and Nanoscale Physics Optics |
| url | https://arxiv.org/abs/2403.10898 |