Carrier confinement and alloy disorder exacerbate Auger-Meitner recombination in AlGaN ultraviolet light-emitting diodes

Fuente: arXiv
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Auteurs principaux: Pant, Nick, Bushick, Kyle, McAllister, Andrew, Lee, Woncheol, Van de Walle, Chris G., Kioupakis, Emmanouil
Format: Preprint
Publié: 2024
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author Pant, Nick
Bushick, Kyle
McAllister, Andrew
Lee, Woncheol
Van de Walle, Chris G.
Kioupakis, Emmanouil
author_facet Pant, Nick
Bushick, Kyle
McAllister, Andrew
Lee, Woncheol
Van de Walle, Chris G.
Kioupakis, Emmanouil
contents The quantum efficiency of AlGaN ultraviolet light-emitting diodes (LEDs) declines (droops) at increasing operating powers due to Auger-Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated by electron-phonon coupling and alloy disorder can induce bulk $C$ coefficients as large as $\sim10^{-31}$ cm$^6$/s. Furthermore, we find that the confinement of carriers by polarization fields within quantum wells severely relaxes crystal-momentum conservation, which exacerbates the rate of AMR over radiative recombination by an order of magnitude relative to the bulk. This results in a striking decrease in quantum efficiency at high power. Suppressing polarization fields and jointly increasing the well width would greatly mitigate AMR and efficiency droop.
format Preprint
id arxiv_https___arxiv_org_abs_2403_11019
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Carrier confinement and alloy disorder exacerbate Auger-Meitner recombination in AlGaN ultraviolet light-emitting diodes
Pant, Nick
Bushick, Kyle
McAllister, Andrew
Lee, Woncheol
Van de Walle, Chris G.
Kioupakis, Emmanouil
Materials Science
Disordered Systems and Neural Networks
Mesoscale and Nanoscale Physics
Applied Physics
The quantum efficiency of AlGaN ultraviolet light-emitting diodes (LEDs) declines (droops) at increasing operating powers due to Auger-Meitner recombination (AMR). Using first-principles density-functional theory, we show that indirect AMR mediated by electron-phonon coupling and alloy disorder can induce bulk $C$ coefficients as large as $\sim10^{-31}$ cm$^6$/s. Furthermore, we find that the confinement of carriers by polarization fields within quantum wells severely relaxes crystal-momentum conservation, which exacerbates the rate of AMR over radiative recombination by an order of magnitude relative to the bulk. This results in a striking decrease in quantum efficiency at high power. Suppressing polarization fields and jointly increasing the well width would greatly mitigate AMR and efficiency droop.
title Carrier confinement and alloy disorder exacerbate Auger-Meitner recombination in AlGaN ultraviolet light-emitting diodes
topic Materials Science
Disordered Systems and Neural Networks
Mesoscale and Nanoscale Physics
Applied Physics
url https://arxiv.org/abs/2403.11019