Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C84 single-molecule transistor
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arXiv
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866911800395563008 |
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| author | Wang, Feng Shen, Wangqiang Shui, Yuan Chen, Jun Wang, Huaiqiang Wang, Rui Qin, Yuyuan Wang, Xuefeng Wan, Jianguo Zhang, Minhao Lu, Xing Yang, Tao Song, Fengqi |
| author_facet | Wang, Feng Shen, Wangqiang Shui, Yuan Chen, Jun Wang, Huaiqiang Wang, Rui Qin, Yuyuan Wang, Xuefeng Wan, Jianguo Zhang, Minhao Lu, Xing Yang, Tao Song, Fengqi |
| contents | Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling microscope. However, it has rarely been applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we demonstrate realization of the electrically controlled Zeeman effect in Dy@C84 single-molecule transistors, thus revealing a transition in the magnetic moment from 3.8 μB to 5.1 μB for the ground-state GN at an electric field strength of 3-10 MV/cm. The consequent magnetoresistance significantly increases from 600% to 1100% at the resonant tunneling point. Density functional theory calculations further corroborate our realization of nonvolatile switching of single-atom magnetism, and the switching stability emanates from an energy barrier of 92 meV for atomic relaxation. These results highlight the potential of using endohedral metallofullerenes for high-temperature, high-stability, high-speed, and compact single-atom magnetic data storage. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_11137 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C84 single-molecule transistor Wang, Feng Shen, Wangqiang Shui, Yuan Chen, Jun Wang, Huaiqiang Wang, Rui Qin, Yuyuan Wang, Xuefeng Wan, Jianguo Zhang, Minhao Lu, Xing Yang, Tao Song, Fengqi Materials Science Atomic and Molecular Clusters Single-atom magnetism switching is a key technique towards the ultimate data storage density of computer hard disks and has been conceptually realized by leveraging the spin bistability of a magnetic atom under a scanning tunnelling microscope. However, it has rarely been applied to solid-state transistors, an advancement that would be highly desirable for enabling various applications. Here, we demonstrate realization of the electrically controlled Zeeman effect in Dy@C84 single-molecule transistors, thus revealing a transition in the magnetic moment from 3.8 μB to 5.1 μB for the ground-state GN at an electric field strength of 3-10 MV/cm. The consequent magnetoresistance significantly increases from 600% to 1100% at the resonant tunneling point. Density functional theory calculations further corroborate our realization of nonvolatile switching of single-atom magnetism, and the switching stability emanates from an energy barrier of 92 meV for atomic relaxation. These results highlight the potential of using endohedral metallofullerenes for high-temperature, high-stability, high-speed, and compact single-atom magnetic data storage. |
| title | Electrically controlled nonvolatile switching of single-atom magnetism in a Dy@C84 single-molecule transistor |
| topic | Materials Science Atomic and Molecular Clusters |
| url | https://arxiv.org/abs/2403.11137 |