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| Main Authors: | , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2403.11341 |
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Table of Contents:
- The anisotropic thermal conductivity and the phonon mean free path (mfp) in monoclinic $β$-Ga$_2$O$_3$ single crystals and homoepitaxial films of several $μ$m were determined using the 3$ω$-method in the temperature range from 10K-300 K. The measured effective thermal conductivity of both, single crystal and homoepitaxial films are in the order of 20 W/(mK) at room temperature, below 30 K it increases with a maximum of 1000 to 2000 W/(mK) and decreases with T$^3$ below 25 K. Analysis of the phonon mfp shows a dominance of phonon-phonon-Umklapp scattering above 80 K, below which the influence of point-defect scattering is observed. Below 30 K the phonon mfp increases until it is limited by the total $β$-Ga$_2$O$_3$ sample size. A crossover from resistive to ballistic phonon transport is observed below 20 K and boundary effects of the total sample size become dominant. This reveals that the homoepitaxial film-substrate interface is highly phonon-transparent. The resistive and ballistic phonon transport regimes in $β$-Ga$_2$O$_3$ are discussed corresponding to the models of Callaway and Majumdar, respectively.