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| Main Authors: | , , , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2403.11465 |
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| _version_ | 1866909139712606208 |
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| author | Lyu, Bosai Chen, Jiajun Wang, Sen Lou, Shuo Shen, Peiyue Xie, Jingxu Qiu, Lu Mitchell, Izaac Li, Can Hu, Cheng Zhou, Xianliang Watanabe, Kenji Taniguchi, Takashi Wang, Xiaoqun Jia, Jinfeng Liang, Qi Chen, Guorui Li, Tingxin Wang, Shiyong Ouyang, Wengen Hod, Oded Ding, Feng Urbakh, Michael Shi, Zhiwen |
| author_facet | Lyu, Bosai Chen, Jiajun Wang, Sen Lou, Shuo Shen, Peiyue Xie, Jingxu Qiu, Lu Mitchell, Izaac Li, Can Hu, Cheng Zhou, Xianliang Watanabe, Kenji Taniguchi, Takashi Wang, Xiaoqun Jia, Jinfeng Liang, Qi Chen, Guorui Li, Tingxin Wang, Shiyong Ouyang, Wengen Hod, Oded Ding, Feng Urbakh, Michael Shi, Zhiwen |
| contents | Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination, and unscalable. Here, we report on the transfer-free direct growth of high-quality graphene nanoribbons (GNRs) within h-BN stacks. The as-grown embedded GNRs exhibit highly desirable features being ultralong (up to 0.25 mm), ultranarrow ( < 5 nm), and homochiral with zigzag edges. Our atomistic simulations reveal that the mechanism underlying the embedded growth involves ultralow GNR friction when sliding between AA'-stacked h-BN layers. Using the grown structures, we demonstrate the transfer-free fabrication of embedded GNR field-effect devices that exhibit excellent performance at room temperature with mobilities of up to 4,600 $cm^{2} V^{-1} s^{-1}$ and on-off ratios of up to $10^{6}$. This paves the way to the bottom-up fabrication of high-performance electronic devices based on embedded layered materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_11465 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Ultra-Long Homochiral Graphene Nanoribbons Grown Within h-BN Stacks for High-Performance Electronics Lyu, Bosai Chen, Jiajun Wang, Sen Lou, Shuo Shen, Peiyue Xie, Jingxu Qiu, Lu Mitchell, Izaac Li, Can Hu, Cheng Zhou, Xianliang Watanabe, Kenji Taniguchi, Takashi Wang, Xiaoqun Jia, Jinfeng Liang, Qi Chen, Guorui Li, Tingxin Wang, Shiyong Ouyang, Wengen Hod, Oded Ding, Feng Urbakh, Michael Shi, Zhiwen Mesoscale and Nanoscale Physics Materials Science Van der Waals encapsulation of two-dimensional materials within hexagonal boron nitride (h-BN) stacks has proven to be a promising way to create ultrahigh-performance electronic devices. However, contemporary approaches for achieving van der Waals encapsulation, which involve artificial layer stacking using mechanical transfer techniques, are difficult to control, prone to contamination, and unscalable. Here, we report on the transfer-free direct growth of high-quality graphene nanoribbons (GNRs) within h-BN stacks. The as-grown embedded GNRs exhibit highly desirable features being ultralong (up to 0.25 mm), ultranarrow ( < 5 nm), and homochiral with zigzag edges. Our atomistic simulations reveal that the mechanism underlying the embedded growth involves ultralow GNR friction when sliding between AA'-stacked h-BN layers. Using the grown structures, we demonstrate the transfer-free fabrication of embedded GNR field-effect devices that exhibit excellent performance at room temperature with mobilities of up to 4,600 $cm^{2} V^{-1} s^{-1}$ and on-off ratios of up to $10^{6}$. This paves the way to the bottom-up fabrication of high-performance electronic devices based on embedded layered materials. |
| title | Ultra-Long Homochiral Graphene Nanoribbons Grown Within h-BN Stacks for High-Performance Electronics |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2403.11465 |