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| Format: | Preprint |
| Veröffentlicht: |
2024
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| Online-Zugang: | https://arxiv.org/abs/2403.11619 |
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| _version_ | 1866916165609062400 |
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| author | Lionel, Chrislene Das, Shubham Banik, Diparnab Koley, S. |
| author_facet | Lionel, Chrislene Das, Shubham Banik, Diparnab Koley, S. |
| contents | Composite oxides have been indeed proved to be valuable materials in optoelectronic applications. The combination of indium oxide and gallium oxide and other materials can lead to enhanced optical and electronic properties, making them suitable for a variety of optoelectronic devices. Meticulous analysis of the various optical properties helped to draw conclusions about the heterostructure of Indium and Gallium oxide and its use as a suitable semiconducting material in the medium bandgap range. The density of states and the band structure have been obtained from the density functional theory calculations. Real frequency phonon density of states supports dynamical stability of the crystal structure. A favorable energy band gap is achieved in the visible region of the spectrum, indicating that this mixed oxide is well suited for optoelectronic devices such as LEDs and solar cells. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_11619 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Theoretical Study on Optoelectronic properties of Layered In2O3 and Ga2O3 Lionel, Chrislene Das, Shubham Banik, Diparnab Koley, S. Materials Science Composite oxides have been indeed proved to be valuable materials in optoelectronic applications. The combination of indium oxide and gallium oxide and other materials can lead to enhanced optical and electronic properties, making them suitable for a variety of optoelectronic devices. Meticulous analysis of the various optical properties helped to draw conclusions about the heterostructure of Indium and Gallium oxide and its use as a suitable semiconducting material in the medium bandgap range. The density of states and the band structure have been obtained from the density functional theory calculations. Real frequency phonon density of states supports dynamical stability of the crystal structure. A favorable energy band gap is achieved in the visible region of the spectrum, indicating that this mixed oxide is well suited for optoelectronic devices such as LEDs and solar cells. |
| title | Theoretical Study on Optoelectronic properties of Layered In2O3 and Ga2O3 |
| topic | Materials Science |
| url | https://arxiv.org/abs/2403.11619 |