Combining intrinsic and sliding-induced polarizations for multistates in two dimensional ferroelectrics
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866913711590998016 |
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| author | Tang, Chuhan Tian, Zhiqiang Ouyang, Tao Pan, Anlian Chen, Mingxing |
| author_facet | Tang, Chuhan Tian, Zhiqiang Ouyang, Tao Pan, Anlian Chen, Mingxing |
| contents | Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric (FE) memory devices toward ultra-high-density information storage. Here, we propose to build multistates by combining the intrinsic and sliding-induced polarizations. The physics is that there is at least one order of magnitude difference in the energy barriers between these two types of polarization, which leads to a significant difference in the electric fields for reversing the polarization. This difference, along with the symmetry breaking, allows for a unique flipping mechanism involving layer-by-layer sliding followed by layer-by-layer flipping during the transformation of the multistates. As a result, six and ten switchable states can be achieved for the 1T" bilayers and trilayers, respectively. We further illustrate the concept in H-stacking bilayers and trilayers of 1T" transition-metal dichalcogenides by first-principles calculations. Our study provides a new route to design novel polarization states for developing next-generation memory devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_11813 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Combining intrinsic and sliding-induced polarizations for multistates in two dimensional ferroelectrics Tang, Chuhan Tian, Zhiqiang Ouyang, Tao Pan, Anlian Chen, Mingxing Materials Science Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric (FE) memory devices toward ultra-high-density information storage. Here, we propose to build multistates by combining the intrinsic and sliding-induced polarizations. The physics is that there is at least one order of magnitude difference in the energy barriers between these two types of polarization, which leads to a significant difference in the electric fields for reversing the polarization. This difference, along with the symmetry breaking, allows for a unique flipping mechanism involving layer-by-layer sliding followed by layer-by-layer flipping during the transformation of the multistates. As a result, six and ten switchable states can be achieved for the 1T" bilayers and trilayers, respectively. We further illustrate the concept in H-stacking bilayers and trilayers of 1T" transition-metal dichalcogenides by first-principles calculations. Our study provides a new route to design novel polarization states for developing next-generation memory devices. |
| title | Combining intrinsic and sliding-induced polarizations for multistates in two dimensional ferroelectrics |
| topic | Materials Science |
| url | https://arxiv.org/abs/2403.11813 |