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Bibliographic Details
Main Authors: Pocher, Liam A., Adeyeye, Temitayo N., Gibeault, Sidra, Talatchian, Philippe, Ebels, Ursula, Lathrop, Daniel P., McClelland, Jabez J., Stiles, Mark D., Madhavan, Advait, Daniels, Matthew W.
Format: Preprint
Published: 2024
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Online Access:https://arxiv.org/abs/2403.11988
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author Pocher, Liam A.
Adeyeye, Temitayo N.
Gibeault, Sidra
Talatchian, Philippe
Ebels, Ursula
Lathrop, Daniel P.
McClelland, Jabez J.
Stiles, Mark D.
Madhavan, Advait
Daniels, Matthew W.
author_facet Pocher, Liam A.
Adeyeye, Temitayo N.
Gibeault, Sidra
Talatchian, Philippe
Ebels, Ursula
Lathrop, Daniel P.
McClelland, Jabez J.
Stiles, Mark D.
Madhavan, Advait
Daniels, Matthew W.
contents Superparamagnetic tunnel junctions are important devices for a range of emerging technologies, but most existing compact models capture only their mean switching rates. Capturing qualitatively accurate analog dynamics of these devices will be important as the technology scales up. Here we present results using a one-dimensional overdamped Langevin equation that captures statistical properties of measured time traces, including voltage histograms, drift and diffusion characteristics as measured with Kramers-Moyal coefficients, and dwell times distributions. While common macrospin models are more physically-motivated magnetic models than the Langevin model, we show that for the device measured here, they capture even fewer of the measured experimental behaviors.
format Preprint
id arxiv_https___arxiv_org_abs_2403_11988
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Measurement-driven Langevin modeling of superparamagnetic tunnel junctions
Pocher, Liam A.
Adeyeye, Temitayo N.
Gibeault, Sidra
Talatchian, Philippe
Ebels, Ursula
Lathrop, Daniel P.
McClelland, Jabez J.
Stiles, Mark D.
Madhavan, Advait
Daniels, Matthew W.
Applied Physics
Mesoscale and Nanoscale Physics
Materials Science
Superparamagnetic tunnel junctions are important devices for a range of emerging technologies, but most existing compact models capture only their mean switching rates. Capturing qualitatively accurate analog dynamics of these devices will be important as the technology scales up. Here we present results using a one-dimensional overdamped Langevin equation that captures statistical properties of measured time traces, including voltage histograms, drift and diffusion characteristics as measured with Kramers-Moyal coefficients, and dwell times distributions. While common macrospin models are more physically-motivated magnetic models than the Langevin model, we show that for the device measured here, they capture even fewer of the measured experimental behaviors.
title Measurement-driven Langevin modeling of superparamagnetic tunnel junctions
topic Applied Physics
Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2403.11988