Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes
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arXiv
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866910373242732544 |
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| author | Kim, Kwan-Ho Han, Zirun Zhang, Yinuo Musavigharavi, Pariasadat Zheng, Jeffrey Pradhan, Dhiren K. Stach, Eric A. Olsson III, Roy H. Jariwala, Deep |
| author_facet | Kim, Kwan-Ho Han, Zirun Zhang, Yinuo Musavigharavi, Pariasadat Zheng, Jeffrey Pradhan, Dhiren K. Stach, Eric A. Olsson III, Roy H. Jariwala, Deep |
| contents | The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherently selector-free nature, facilitating high-density crossbar arrays. Here, we demonstrate BEOL-compatible, high-performance FE-diodes scaled to 5, 10, and 20 nm FE Al0.72Sc0.28N/Al0.64Sc0.36N films. Through interlayer (IL) engineering, we show substantial improvements in the ON/OFF ratios (>166 times) and rectification ratios (>176 times) in these scaled devices. The superlative characteristics also enables 5-bit multi-state operation with a stable retention. We also experimentally and theoretically demonstrate the counterintuitive result that the inclusion of an IL can lead to a decrease in the ferroelectric switching voltage of the device. An in-depth analysis into the device transport mechanisms is performed, and our compact model aligns seamlessly with the experimental results. Our results suggest the possibility of using scaled AlxSc1-xN FE-diodes for high performance, low-power, embedded NVM. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_12361 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes Kim, Kwan-Ho Han, Zirun Zhang, Yinuo Musavigharavi, Pariasadat Zheng, Jeffrey Pradhan, Dhiren K. Stach, Eric A. Olsson III, Roy H. Jariwala, Deep Materials Science Mesoscale and Nanoscale Physics Other Condensed Matter Applied Physics The growth in data generation necessitates efficient data processing technologies to address the von Neumann bottleneck in conventional computer architecture. Memory-driven computing, which integrates non-volatile memory (NVM) devices in a 3D stack, is gaining attention, with CMOS back-end-of-line (BEOL) compatible ferroelectric (FE) diodes being ideal due to their two-terminal design and inherently selector-free nature, facilitating high-density crossbar arrays. Here, we demonstrate BEOL-compatible, high-performance FE-diodes scaled to 5, 10, and 20 nm FE Al0.72Sc0.28N/Al0.64Sc0.36N films. Through interlayer (IL) engineering, we show substantial improvements in the ON/OFF ratios (>166 times) and rectification ratios (>176 times) in these scaled devices. The superlative characteristics also enables 5-bit multi-state operation with a stable retention. We also experimentally and theoretically demonstrate the counterintuitive result that the inclusion of an IL can lead to a decrease in the ferroelectric switching voltage of the device. An in-depth analysis into the device transport mechanisms is performed, and our compact model aligns seamlessly with the experimental results. Our results suggest the possibility of using scaled AlxSc1-xN FE-diodes for high performance, low-power, embedded NVM. |
| title | Multi-State, Ultra-thin, BEOL-Compatible AlScN Ferroelectric Diodes |
| topic | Materials Science Mesoscale and Nanoscale Physics Other Condensed Matter Applied Physics |
| url | https://arxiv.org/abs/2403.12361 |