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| Main Authors: | , , , , |
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| Format: | Preprint |
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2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2403.12430 |
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| _version_ | 1866909141713289216 |
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| author | Zheng, Wenhao Liu Yangzi Kondusamy, Aswin Lakshmi Narayanan Scherm, David L. Malko, Anton. V. Lv, Bing |
| author_facet | Zheng, Wenhao Liu Yangzi Kondusamy, Aswin Lakshmi Narayanan Scherm, David L. Malko, Anton. V. Lv, Bing |
| contents | Transition metal dichalcogenides have received much attention in the past decade not only due to the new fundamental physics, but also due to the emergent applications in these materials. Currently chalcogenide deficiencies in TMDs are commonly believed either during the high temperature growth procedure or in the nanofabrication process resulting significant changes of their reported physical properties in the literature. Here we perform a systematic study involving pristine stochiometric HfSe2, Se deficient HfSe1.9 and HfSe1.8. Stochiometric HfSe2 transport results show semiconducting behavior with a gap of 1.1eV. Annealing HfSe2 under high vacuum at room temperature causes the Se loss resulting in HfSe1.9, which shows unconventionally large magnetoresistivity following the extended Kohler's rule at low temperatures below 50 K. Moreover, a clear electrical resistivity crossover, mimicking the metal-insulator transition, is observed in the HfSe1.9 single crystal. Further increasing the degree of deficiency in HfSe1.8 results in complete metallic electrical transport at all temperatures down to 2K. Such a drastic difference in the transport behaviors of stoichiometric and Se-deficient HfSe2 further emphasizes that defect control and engineering could be an effective method that could be used to tailor the electronic structure of 2D materials, potentially unlock new states of matter, or even discover new materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_12430 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electrical transport crossover and large magnetoresistance in selenium deficient van der Waals HfSe2-x Zheng, Wenhao Liu Yangzi Kondusamy, Aswin Lakshmi Narayanan Scherm, David L. Malko, Anton. V. Lv, Bing Materials Science Transition metal dichalcogenides have received much attention in the past decade not only due to the new fundamental physics, but also due to the emergent applications in these materials. Currently chalcogenide deficiencies in TMDs are commonly believed either during the high temperature growth procedure or in the nanofabrication process resulting significant changes of their reported physical properties in the literature. Here we perform a systematic study involving pristine stochiometric HfSe2, Se deficient HfSe1.9 and HfSe1.8. Stochiometric HfSe2 transport results show semiconducting behavior with a gap of 1.1eV. Annealing HfSe2 under high vacuum at room temperature causes the Se loss resulting in HfSe1.9, which shows unconventionally large magnetoresistivity following the extended Kohler's rule at low temperatures below 50 K. Moreover, a clear electrical resistivity crossover, mimicking the metal-insulator transition, is observed in the HfSe1.9 single crystal. Further increasing the degree of deficiency in HfSe1.8 results in complete metallic electrical transport at all temperatures down to 2K. Such a drastic difference in the transport behaviors of stoichiometric and Se-deficient HfSe2 further emphasizes that defect control and engineering could be an effective method that could be used to tailor the electronic structure of 2D materials, potentially unlock new states of matter, or even discover new materials. |
| title | Electrical transport crossover and large magnetoresistance in selenium deficient van der Waals HfSe2-x |
| topic | Materials Science |
| url | https://arxiv.org/abs/2403.12430 |