Interlayer Dzyaloshinskii-Moriya interaction in synthetic ferrimagnets
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arXiv
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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866912830226169856 |
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| author | Li, Shen Fattouhi, Mouad Huang, Tianxun Lv, Chen de Jong, Mark C. H. Li, Pingzhi Lin, Xiaoyang Garcia-Sanchez, Felipe Martinez, Eduardo Mangin, Stéphane Koopmans, Bert Zhao, Weisheng Lavrijsen, Reinoud |
| author_facet | Li, Shen Fattouhi, Mouad Huang, Tianxun Lv, Chen de Jong, Mark C. H. Li, Pingzhi Lin, Xiaoyang Garcia-Sanchez, Felipe Martinez, Eduardo Mangin, Stéphane Koopmans, Bert Zhao, Weisheng Lavrijsen, Reinoud |
| contents | The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin interaction provides a new dimension for controlling spin textures and dynamics. However, the role of IL-DMI in the field induced and spin-orbit torque (SOT) induced switching of synthetic ferrimagnets (SFi) has not been uncovered. Here, we exploit interlayer chiral exchange bias fields in SFi to address both the sign and magnitude of the IL-DMI. Depending on the degree of imbalance between the two magnetic moments of the SFi, the amount of asymmetry, addressed via loop shifts of the hysteresis loops under an in-plane field reveals a unidirectional and chiral nature of the IL-DMI. The devices are then tested with SOT switching experiments and the process is examined via both transient state and steady state detection. In addition to field-free SOT switching, we find that the combination of IL-DMI and SOT give rise to multi-resistance states, which provides a possible direction for the future design of neuromorphic computing devices based on SOT. This work is a step towards characterizing and understanding the IL-DMI for spintronic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_12642 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Interlayer Dzyaloshinskii-Moriya interaction in synthetic ferrimagnets Li, Shen Fattouhi, Mouad Huang, Tianxun Lv, Chen de Jong, Mark C. H. Li, Pingzhi Lin, Xiaoyang Garcia-Sanchez, Felipe Martinez, Eduardo Mangin, Stéphane Koopmans, Bert Zhao, Weisheng Lavrijsen, Reinoud Applied Physics Mesoscale and Nanoscale Physics no The antisymmetric interlayer exchange interaction, i.e., interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) has attracted significant interest since this long-range chiral spin interaction provides a new dimension for controlling spin textures and dynamics. However, the role of IL-DMI in the field induced and spin-orbit torque (SOT) induced switching of synthetic ferrimagnets (SFi) has not been uncovered. Here, we exploit interlayer chiral exchange bias fields in SFi to address both the sign and magnitude of the IL-DMI. Depending on the degree of imbalance between the two magnetic moments of the SFi, the amount of asymmetry, addressed via loop shifts of the hysteresis loops under an in-plane field reveals a unidirectional and chiral nature of the IL-DMI. The devices are then tested with SOT switching experiments and the process is examined via both transient state and steady state detection. In addition to field-free SOT switching, we find that the combination of IL-DMI and SOT give rise to multi-resistance states, which provides a possible direction for the future design of neuromorphic computing devices based on SOT. This work is a step towards characterizing and understanding the IL-DMI for spintronic applications. |
| title | Interlayer Dzyaloshinskii-Moriya interaction in synthetic ferrimagnets |
| topic | Applied Physics Mesoscale and Nanoscale Physics no |
| url | https://arxiv.org/abs/2403.12642 |