Electron-hole scattering-induced temperature behaviour of HgTe-based semimetal quantum well
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arXiv
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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866916167355990016 |
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| author | Snegirev, A. V. Kovalev, V. M. Entin, M. V. Olshanetsky, E. B. Mikhailov, N. N. Kvon, Z. D. |
| author_facet | Snegirev, A. V. Kovalev, V. M. Entin, M. V. Olshanetsky, E. B. Mikhailov, N. N. Kvon, Z. D. |
| contents | The semimetal quantum well (QW) based on HgTe structures exhibiting unusual transport properties at low temperature is examined experimentally. It demonstrates either a linear or quadratic growth of resistance with temperature at different top-gate voltages in the semimetal regime. We develop a theoretical model of HgTe-based semimetal QW resistance temperature dependence based on electron-hole scattering processes at low temperatures. We apply the Boltzmann transport equation approach to study the effect of electron-hole scattering in a semimetal QW. The calculated temperature behavior of 2D semimetal resistivity demonstrates an excellent agreement with experimental findings. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2403_13387 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electron-hole scattering-induced temperature behaviour of HgTe-based semimetal quantum well Snegirev, A. V. Kovalev, V. M. Entin, M. V. Olshanetsky, E. B. Mikhailov, N. N. Kvon, Z. D. Mesoscale and Nanoscale Physics The semimetal quantum well (QW) based on HgTe structures exhibiting unusual transport properties at low temperature is examined experimentally. It demonstrates either a linear or quadratic growth of resistance with temperature at different top-gate voltages in the semimetal regime. We develop a theoretical model of HgTe-based semimetal QW resistance temperature dependence based on electron-hole scattering processes at low temperatures. We apply the Boltzmann transport equation approach to study the effect of electron-hole scattering in a semimetal QW. The calculated temperature behavior of 2D semimetal resistivity demonstrates an excellent agreement with experimental findings. |
| title | Electron-hole scattering-induced temperature behaviour of HgTe-based semimetal quantum well |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2403.13387 |