Picosecond Femtojoule Resistive Switching in Nanoscale VO$_{2}$ Memristors
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arXiv
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| Format: | Preprint |
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2024
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| author | Schmid, S. W. Pósa, L. Török, T. N. Sánta, B. Pollner, Z. Molnár, G. Horst, Y. Volk, J. Leuthold, J. Halbritter, A. Csontos, M. |
| author_facet | Schmid, S. W. Pósa, L. Török, T. N. Sánta, B. Pollner, Z. Molnár, G. Horst, Y. Volk, J. Leuthold, J. Halbritter, A. Csontos, M. |
| contents | Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable source of such functional complexity. However, its full potential in high-speed and low-power operation has been largely unexplored. We fabricated nanoscale VO$_{2}$ devices embedded in a broad-band test circuit to study the speed and energy limitations of their resistive switching operation. Our picosecond time-resolution, real-time resistive switching experiments and numerical simulations demonstrate that tunable low-resistance states can be set by the application of 20~ps long, $<$1.7~V amplitude voltage pulses at 15~ps incubation times and switching energies starting from a few femtojoule. Moreover, we demonstrate that at nanometer-scale device sizes not only the electric field induced insulator-to-metal transition, but also the thermal conduction limited metal-to-insulator transition can take place at timescales of 100's of picoseconds. These orders of magnitude breakthroughs open the route to the design of high-speed and low-power dynamical circuits for a plethora of neuromorphic computing applications from pattern recognition to numerical optimization. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_13530 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Picosecond Femtojoule Resistive Switching in Nanoscale VO$_{2}$ Memristors Schmid, S. W. Pósa, L. Török, T. N. Sánta, B. Pollner, Z. Molnár, G. Horst, Y. Volk, J. Leuthold, J. Halbritter, A. Csontos, M. Mesoscale and Nanoscale Physics Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable source of such functional complexity. However, its full potential in high-speed and low-power operation has been largely unexplored. We fabricated nanoscale VO$_{2}$ devices embedded in a broad-band test circuit to study the speed and energy limitations of their resistive switching operation. Our picosecond time-resolution, real-time resistive switching experiments and numerical simulations demonstrate that tunable low-resistance states can be set by the application of 20~ps long, $<$1.7~V amplitude voltage pulses at 15~ps incubation times and switching energies starting from a few femtojoule. Moreover, we demonstrate that at nanometer-scale device sizes not only the electric field induced insulator-to-metal transition, but also the thermal conduction limited metal-to-insulator transition can take place at timescales of 100's of picoseconds. These orders of magnitude breakthroughs open the route to the design of high-speed and low-power dynamical circuits for a plethora of neuromorphic computing applications from pattern recognition to numerical optimization. |
| title | Picosecond Femtojoule Resistive Switching in Nanoscale VO$_{2}$ Memristors |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2403.13530 |