First-principles studies of Schottky barriers and tunneling properties at Al(111)/Si(111) and CoSi$_2$(111)/Si(111) interfaces

Fuente: arXiv

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Bibliographic Details
Main Authors:	Nangoi, J. K., Palmstrøm, C. J., Van de Walle, C. G.
Format:	Preprint
Published:	2024
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2403.13986