Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2024
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866910377568108544 |
|---|---|
| author | Kang, Sueyeong Petit, Matthieu Heresanu, Vasile Altié, Alexandre Beaujard, Thomas Bon, Ganaël Cespedes, Oscar Hickey, Brian Michez, Lisa |
| author_facet | Kang, Sueyeong Petit, Matthieu Heresanu, Vasile Altié, Alexandre Beaujard, Thomas Bon, Ganaël Cespedes, Oscar Hickey, Brian Michez, Lisa |
| contents | Structural and magnetic properties of Mn5(SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the development of spintronics. Here, Mn5(SixGe1-x)3 thin films were grown on Ge(111) substrates by co-deposition using molecular beam epitaxy. Crystalline thin films can be produced with controlled Si concentrations ranging from 0 to 1. The thin films were relaxed by dislocations at the interface with the substrate. A lattice parameter variation was observed as the Si content increased, which is comparable to previous works done in bulk. Reflection highenergy electron diffraction diagrams and X-ray diffraction profiles showed that lattice parameters a and c are shrinking and that the surface roughness and crystallinity degrade as the Si amount increases. Magnetometric measurements revealed a ferromagnetic behavior for all Si concentrations. The measured average ferromagnetic moment per manganese atom decreased from 2.33 to 0.05 μB/Mn atom. No ferro to anti-ferromagnetic transition was observed contrary to the bulk Mn5(SixGe1-x)3 compound. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_14215 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films Kang, Sueyeong Petit, Matthieu Heresanu, Vasile Altié, Alexandre Beaujard, Thomas Bon, Ganaël Cespedes, Oscar Hickey, Brian Michez, Lisa Materials Science Structural and magnetic properties of Mn5(SixGe1-x)3 thin films were investigated. Ferromagnetic Mn5Ge3 and anti-ferromagnetic Mn5Si3 thin films have been synthesized and characterized as these compounds exhibit interesting features for the development of spintronics. Here, Mn5(SixGe1-x)3 thin films were grown on Ge(111) substrates by co-deposition using molecular beam epitaxy. Crystalline thin films can be produced with controlled Si concentrations ranging from 0 to 1. The thin films were relaxed by dislocations at the interface with the substrate. A lattice parameter variation was observed as the Si content increased, which is comparable to previous works done in bulk. Reflection highenergy electron diffraction diagrams and X-ray diffraction profiles showed that lattice parameters a and c are shrinking and that the surface roughness and crystallinity degrade as the Si amount increases. Magnetometric measurements revealed a ferromagnetic behavior for all Si concentrations. The measured average ferromagnetic moment per manganese atom decreased from 2.33 to 0.05 μB/Mn atom. No ferro to anti-ferromagnetic transition was observed contrary to the bulk Mn5(SixGe1-x)3 compound. |
| title | Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2403.14215 |