Bessel-beam direct-write of the etch-mask in a nano-film of alumina for high-efficiency Si solar cells

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Hauptverfasser: Katkus, Tomas, Ng, Soon Hock, Mu, Haoran, Le, Nguyen Hoai An, Stonyte, Dominyka, Khajehsaeidimahabadi, Zahra, Seniutinas, Gediminas, Baltrukonis, Justas, Ulcinas, Orestas, Mikutis, Mindaugas, Sabonis, Vytautas, Nishijima, Yoshiaki, Rienacker, Michael, Krugener, Jan, Peibst, Robby, John, Sajeev, Juodkazis, Saulius
Format: Preprint
Veröffentlicht: 2024
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author Katkus, Tomas
Ng, Soon Hock
Mu, Haoran
Le, Nguyen Hoai An
Stonyte, Dominyka
Khajehsaeidimahabadi, Zahra
Seniutinas, Gediminas
Baltrukonis, Justas
Ulcinas, Orestas
Mikutis, Mindaugas
Sabonis, Vytautas
Nishijima, Yoshiaki
Rienacker, Michael
Krugener, Jan
Peibst, Robby
John, Sajeev
Juodkazis, Saulius
author_facet Katkus, Tomas
Ng, Soon Hock
Mu, Haoran
Le, Nguyen Hoai An
Stonyte, Dominyka
Khajehsaeidimahabadi, Zahra
Seniutinas, Gediminas
Baltrukonis, Justas
Ulcinas, Orestas
Mikutis, Mindaugas
Sabonis, Vytautas
Nishijima, Yoshiaki
Rienacker, Michael
Krugener, Jan
Peibst, Robby
John, Sajeev
Juodkazis, Saulius
contents Large surface area applications such as high-efficiency > 26% solar cells require surface patterning with 1-10 micrometers periodic patterns at high fidelity over 1-10 cm^2 areas (before up scaling to 1 m^2) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Here we show a pathway to high-resolution sub-1 micrometer etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum-based lithography approach). A Bessel beam was used to alleviate the required high surface tracking tolerance for ablation of 0.3-0.8 micrometer diameter holes in ~40 nm alumina Al2O3-mask at high writing speed, 7.5 cm/s; a patterning rate 1 cm^2 per 20 min. The plasma etching protocol was optimised for a zero-mesa formation of photonic crystal (PhC) trapping structures and smooth surfaces at the nanoscale level. Scaling up in area and throughput of the demonstrated approach is outlined.
format Preprint
id arxiv_https___arxiv_org_abs_2403_14237
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Bessel-beam direct-write of the etch-mask in a nano-film of alumina for high-efficiency Si solar cells
Katkus, Tomas
Ng, Soon Hock
Mu, Haoran
Le, Nguyen Hoai An
Stonyte, Dominyka
Khajehsaeidimahabadi, Zahra
Seniutinas, Gediminas
Baltrukonis, Justas
Ulcinas, Orestas
Mikutis, Mindaugas
Sabonis, Vytautas
Nishijima, Yoshiaki
Rienacker, Michael
Krugener, Jan
Peibst, Robby
John, Sajeev
Juodkazis, Saulius
Optics
Applied Physics
Large surface area applications such as high-efficiency > 26% solar cells require surface patterning with 1-10 micrometers periodic patterns at high fidelity over 1-10 cm^2 areas (before up scaling to 1 m^2) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Here we show a pathway to high-resolution sub-1 micrometer etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum-based lithography approach). A Bessel beam was used to alleviate the required high surface tracking tolerance for ablation of 0.3-0.8 micrometer diameter holes in ~40 nm alumina Al2O3-mask at high writing speed, 7.5 cm/s; a patterning rate 1 cm^2 per 20 min. The plasma etching protocol was optimised for a zero-mesa formation of photonic crystal (PhC) trapping structures and smooth surfaces at the nanoscale level. Scaling up in area and throughput of the demonstrated approach is outlined.
title Bessel-beam direct-write of the etch-mask in a nano-film of alumina for high-efficiency Si solar cells
topic Optics
Applied Physics
url https://arxiv.org/abs/2403.14237