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| Main Authors: | , , , , |
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| Format: | Preprint |
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2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2403.14893 |
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| _version_ | 1866914972128247808 |
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| author | Liu, Lu Liu, Yuntian Li, Jiayu Wu, Hua Liu, Qihang |
| author_facet | Liu, Lu Liu, Yuntian Li, Jiayu Wu, Hua Liu, Qihang |
| contents | Quantum spin Hall insulators hosting edge spin currents hold great potential for low-power spintronic devices. In this paper, we present a universal approach to achieve a high and near-quantized spin Hall conductance plateau within a sizable bulk gap. Using a nonmagnetic four-band model Hamiltonian, we demonstrate that an even-spin Chern (ESC) insulator can be accessed by tuning the sign of spin-orbit coupling (SOC) within a crystal symmetry-enforced orbital doublet. With the assistance of a high spin Chern number of $C_{S}=-2$ and spin $U$(1) quasisymmetry, this orbital-doublet-driven ESC phase is endowed with the near-double-quantized spin Hall conductance. We identify 12 crystallographic point groups supporting such a sign-tunable SOC. Furthermore, we apply our theory to realistic examples, and show the phase transition from a trivial insulator governed by positive SOC in the RuI$_{3}$ monolayer to an ESC insulator dominated by negative SOC in the RuBr$_{3}$ monolayer. This orbital-doublet-driven ESC insulator, RuBr$_{3}$, showcases nontrivial characteristics including helical edge states, near-double-quantized spin Hall conductance, and robust corner states. Our work provides different pathways in the pursuit of the long-sought quantum spin Hall insulators. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_14893 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Orbital doublet driven even-spin Chern insulators Liu, Lu Liu, Yuntian Li, Jiayu Wu, Hua Liu, Qihang Materials Science Quantum spin Hall insulators hosting edge spin currents hold great potential for low-power spintronic devices. In this paper, we present a universal approach to achieve a high and near-quantized spin Hall conductance plateau within a sizable bulk gap. Using a nonmagnetic four-band model Hamiltonian, we demonstrate that an even-spin Chern (ESC) insulator can be accessed by tuning the sign of spin-orbit coupling (SOC) within a crystal symmetry-enforced orbital doublet. With the assistance of a high spin Chern number of $C_{S}=-2$ and spin $U$(1) quasisymmetry, this orbital-doublet-driven ESC phase is endowed with the near-double-quantized spin Hall conductance. We identify 12 crystallographic point groups supporting such a sign-tunable SOC. Furthermore, we apply our theory to realistic examples, and show the phase transition from a trivial insulator governed by positive SOC in the RuI$_{3}$ monolayer to an ESC insulator dominated by negative SOC in the RuBr$_{3}$ monolayer. This orbital-doublet-driven ESC insulator, RuBr$_{3}$, showcases nontrivial characteristics including helical edge states, near-double-quantized spin Hall conductance, and robust corner states. Our work provides different pathways in the pursuit of the long-sought quantum spin Hall insulators. |
| title | Orbital doublet driven even-spin Chern insulators |
| topic | Materials Science |
| url | https://arxiv.org/abs/2403.14893 |