Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature
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arXiv
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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866911828000374784 |
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| author | Iwański, Jakub Kierdaszuk, Jakub Ciesielski, Arkadiusz Binder, Johannes Drabińska, Aneta Wysmołek, Andrzej |
| author_facet | Iwański, Jakub Kierdaszuk, Jakub Ciesielski, Arkadiusz Binder, Johannes Drabińska, Aneta Wysmołek, Andrzej |
| contents | A common solution for precise magnetic field sensing is to employ spin-active defects in semiconductors, with the NV center in diamond as prominent example. However, the three-dimensional nature of diamond limits the obtainable proximity of the defect to the sample. Two-dimensional boron nitride, which can host spin-active defects, can be used to overcome those limitations. In this work, we study spin properties of sp2-bonded boron nitride layers grown using Metal Organic Chemical Vapor Deposition at temperatures ranging from 700 $^\circ$C to 1200 $^\circ$C. With Electron Spin Resonance (ESR) we show that our layers exhibit spin properties, which we ascribe to carbon related defects. Supported by photoluminescence and Fourier-transform infrared spectroscopy, we distinguish three different regimes: (i) growth at low temperatures with no ESR signal, (ii) growth at intermediate temperatures with a strong ESR signal and a large number of spin defects, (iii) growth at high temperatures with a weaker ESR signal and a lower number of spin defects. The observed effects can be further enhanced by an additional annealing step. Our studies demonstrate wafer-scale boron nitride that intrinsically hosts spin defects without any ion or neutron irradiation, which may be employed in spin memories or magnetic field detectors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_15346 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature Iwański, Jakub Kierdaszuk, Jakub Ciesielski, Arkadiusz Binder, Johannes Drabińska, Aneta Wysmołek, Andrzej Materials Science A common solution for precise magnetic field sensing is to employ spin-active defects in semiconductors, with the NV center in diamond as prominent example. However, the three-dimensional nature of diamond limits the obtainable proximity of the defect to the sample. Two-dimensional boron nitride, which can host spin-active defects, can be used to overcome those limitations. In this work, we study spin properties of sp2-bonded boron nitride layers grown using Metal Organic Chemical Vapor Deposition at temperatures ranging from 700 $^\circ$C to 1200 $^\circ$C. With Electron Spin Resonance (ESR) we show that our layers exhibit spin properties, which we ascribe to carbon related defects. Supported by photoluminescence and Fourier-transform infrared spectroscopy, we distinguish three different regimes: (i) growth at low temperatures with no ESR signal, (ii) growth at intermediate temperatures with a strong ESR signal and a large number of spin defects, (iii) growth at high temperatures with a weaker ESR signal and a lower number of spin defects. The observed effects can be further enhanced by an additional annealing step. Our studies demonstrate wafer-scale boron nitride that intrinsically hosts spin defects without any ion or neutron irradiation, which may be employed in spin memories or magnetic field detectors. |
| title | Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature |
| topic | Materials Science |
| url | https://arxiv.org/abs/2403.15346 |