Hot electron dynamics in a semiconductor nanowire under intense THz excitation
Fuente:
arXiv
Salvato in:
| Autori principali: | , , , , , , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2024
|
| Soggetti: | |
| Accesso online: | |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866916363638931456 |
|---|---|
| author | Luferau, Andrei Obst, Maximilian Winnerl, Stephan Pashkin, Alexej Kehr, Susanne C. Dimakis, Emmanouil Kaps, Felix G. Hatem, Osama Mavridou, Kalliopi Eng, Lukas M. Helm, Manfred |
| author_facet | Luferau, Andrei Obst, Maximilian Winnerl, Stephan Pashkin, Alexej Kehr, Susanne C. Dimakis, Emmanouil Kaps, Felix G. Hatem, Osama Mavridou, Kalliopi Eng, Lukas M. Helm, Manfred |
| contents | We report THz-pump / mid-infrared probe near-field studies on Si-doped GaAs-InGaAs core-shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating up of electrons in the conduction band. The simulation of heated electron distributions anticipates a significant electron population in both L- and X-valleys. The two-temperature model is utilized for a quantitative analysis of the dynamics of the electron gas temperature under THz pumping at various power levels. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_17195 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Hot electron dynamics in a semiconductor nanowire under intense THz excitation Luferau, Andrei Obst, Maximilian Winnerl, Stephan Pashkin, Alexej Kehr, Susanne C. Dimakis, Emmanouil Kaps, Felix G. Hatem, Osama Mavridou, Kalliopi Eng, Lukas M. Helm, Manfred Mesoscale and Nanoscale Physics Materials Science We report THz-pump / mid-infrared probe near-field studies on Si-doped GaAs-InGaAs core-shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating up of electrons in the conduction band. The simulation of heated electron distributions anticipates a significant electron population in both L- and X-valleys. The two-temperature model is utilized for a quantitative analysis of the dynamics of the electron gas temperature under THz pumping at various power levels. |
| title | Hot electron dynamics in a semiconductor nanowire under intense THz excitation |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2403.17195 |