Atomic observation on diamond (001) surfaces with non-contact atomic force microscopy
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arXiv
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| Auteurs principaux: | , , , , , , , |
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| Format: | Preprint |
| Publié: |
2024
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| _version_ | 1866929288782020608 |
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| author | Zhang, Runnan Yasui, Yuuki Fukuda, Masahiro Ozaki, Taisuke Ogura, Masahiko Makino, Toshiharu Takeuchi, Daisuke Sugimoto, Yoshiaki |
| author_facet | Zhang, Runnan Yasui, Yuuki Fukuda, Masahiro Ozaki, Taisuke Ogura, Masahiko Makino, Toshiharu Takeuchi, Daisuke Sugimoto, Yoshiaki |
| contents | To achieve atomic-level characterization of the diamond (001) surface, persistent efforts have been made over the past few decades. The motivation behind the pursuit extends beyond investigating surface defects and adsorbates; it also involves unraveling the mystery of the smooth growth of diamond. However, the inherently low conductivity and the short C-C bonds render atomic resolution imaging exceptionally challenging. Here, we successfully overcame these challenges by employing non-contact atomic force microscopy with reactive Si tips. Atomic resolution imaging was achieved even at room temperature. With density-functional-theory calculations, we clarified that the critical factors for atomic resolution are in the formation of tilted C-Si bonds between scanning probes and surfaces, along with reordering of the surface C-C dimers. Implications of the findings extend beyond the realm of surface characterization. The present atomic-resolution microscopies drive future advancements in diamond technologies by providing avenues for identifying dopants and constructing artificial nanostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_17427 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Atomic observation on diamond (001) surfaces with non-contact atomic force microscopy Zhang, Runnan Yasui, Yuuki Fukuda, Masahiro Ozaki, Taisuke Ogura, Masahiko Makino, Toshiharu Takeuchi, Daisuke Sugimoto, Yoshiaki Materials Science Mesoscale and Nanoscale Physics To achieve atomic-level characterization of the diamond (001) surface, persistent efforts have been made over the past few decades. The motivation behind the pursuit extends beyond investigating surface defects and adsorbates; it also involves unraveling the mystery of the smooth growth of diamond. However, the inherently low conductivity and the short C-C bonds render atomic resolution imaging exceptionally challenging. Here, we successfully overcame these challenges by employing non-contact atomic force microscopy with reactive Si tips. Atomic resolution imaging was achieved even at room temperature. With density-functional-theory calculations, we clarified that the critical factors for atomic resolution are in the formation of tilted C-Si bonds between scanning probes and surfaces, along with reordering of the surface C-C dimers. Implications of the findings extend beyond the realm of surface characterization. The present atomic-resolution microscopies drive future advancements in diamond technologies by providing avenues for identifying dopants and constructing artificial nanostructures. |
| title | Atomic observation on diamond (001) surfaces with non-contact atomic force microscopy |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2403.17427 |