Coherent Modulation of Two-Dimensional Moiré States with On-Chip THz Waves
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arXiv
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| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Preprint |
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2024
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| _version_ | 1866911815857864704 |
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| author | Li, Yiliu Arsenault, Eric A. Yang, Birui Wang, Xi Park, Heonjoon Guo, Yinjie Taniguchi, Takashi Watanabe, Kenji Gamelin, Daniel Hone, James C. Dean, Cory R. Maehrlein, Sebastian F. Xu, Xiaodong Zhu, Xiaoyang |
| author_facet | Li, Yiliu Arsenault, Eric A. Yang, Birui Wang, Xi Park, Heonjoon Guo, Yinjie Taniguchi, Takashi Watanabe, Kenji Gamelin, Daniel Hone, James C. Dean, Cory R. Maehrlein, Sebastian F. Xu, Xiaodong Zhu, Xiaoyang |
| contents | Van der Waals (vdW) structures of two-dimensional materials host a broad range of physical phenomena. New opportunities arise if different functional layers may be remotely modulated or coupled in a device structure. Here we demonstrate the in-situ coherent modulation of moiré excitons and correlated Mott insulators in transition metal dichalcogenide (TMD) homo- or hetero-bilayers with on-chip terahertz (THz) waves. Using common dual-gated device structures, each consisting of a TMD moiré bilayer sandwiched between two few-layer graphene (fl-Gr) gates with hexagonal boron nitride (h-BN) spacers, we launch coherent phonon wavepackets at ~0.4-1 THz from the fl-Gr gates by femtosecond laser excitation. The waves travel through the h-BN spacer, arrive at the TMD bilayer with precise timing, and coherently modulate the moiré excitons or the Mott states. These results demonstrate that the fl-Gr gates, often used for electrical control of the material properties, can serve as effective on-chip opto-elastic transducers to generate THz waves for the coherent control and vibrational entanglement of functional layers in commonly used moiré devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_17974 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Coherent Modulation of Two-Dimensional Moiré States with On-Chip THz Waves Li, Yiliu Arsenault, Eric A. Yang, Birui Wang, Xi Park, Heonjoon Guo, Yinjie Taniguchi, Takashi Watanabe, Kenji Gamelin, Daniel Hone, James C. Dean, Cory R. Maehrlein, Sebastian F. Xu, Xiaodong Zhu, Xiaoyang Mesoscale and Nanoscale Physics Strongly Correlated Electrons Van der Waals (vdW) structures of two-dimensional materials host a broad range of physical phenomena. New opportunities arise if different functional layers may be remotely modulated or coupled in a device structure. Here we demonstrate the in-situ coherent modulation of moiré excitons and correlated Mott insulators in transition metal dichalcogenide (TMD) homo- or hetero-bilayers with on-chip terahertz (THz) waves. Using common dual-gated device structures, each consisting of a TMD moiré bilayer sandwiched between two few-layer graphene (fl-Gr) gates with hexagonal boron nitride (h-BN) spacers, we launch coherent phonon wavepackets at ~0.4-1 THz from the fl-Gr gates by femtosecond laser excitation. The waves travel through the h-BN spacer, arrive at the TMD bilayer with precise timing, and coherently modulate the moiré excitons or the Mott states. These results demonstrate that the fl-Gr gates, often used for electrical control of the material properties, can serve as effective on-chip opto-elastic transducers to generate THz waves for the coherent control and vibrational entanglement of functional layers in commonly used moiré devices. |
| title | Coherent Modulation of Two-Dimensional Moiré States with On-Chip THz Waves |
| topic | Mesoscale and Nanoscale Physics Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2403.17974 |