Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2024
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866929291352080384 |
|---|---|
| author | Dai, Yudi Xiong, Junlin Ge, Yanfeng Cheng, Bin Wang, Lizheng Wang, Pengfei Liu, Zenglin Yan, Shengnan Zhang, Cuiwei Xu, Xianghan Shi, Youguo Cheong, Sang-Wook Xiao, Cong Yang, Shengyuan A. Liang, Shi-Jun Miao, Feng |
| author_facet | Dai, Yudi Xiong, Junlin Ge, Yanfeng Cheng, Bin Wang, Lizheng Wang, Pengfei Liu, Zenglin Yan, Shengnan Zhang, Cuiwei Xu, Xianghan Shi, Youguo Cheong, Sang-Wook Xiao, Cong Yang, Shengyuan A. Liang, Shi-Jun Miao, Feng |
| contents | The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_18189 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure Dai, Yudi Xiong, Junlin Ge, Yanfeng Cheng, Bin Wang, Lizheng Wang, Pengfei Liu, Zenglin Yan, Shengnan Zhang, Cuiwei Xu, Xianghan Shi, Youguo Cheong, Sang-Wook Xiao, Cong Yang, Shengyuan A. Liang, Shi-Jun Miao, Feng Mesoscale and Nanoscale Physics The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing. |
| title | Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2403.18189 |