Rashba spin splitting-induced topological Hall effect in a Dirac semimetal-ferromagnetic semiconductor heterostructure

Fuente: arXiv
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Main Authors: Islam, Saurav, Steinebronn, Emma, Yang, Kaijie, Neupane, Bimal, Chamorro, Juan, Ghosh, Supriya, Mkhoyan, K. Andre, McQueen, Tyrel M., Wang, Yuanxi, Liu, Chaoxing, Samarth, Nitin
Format: Preprint
Published: 2024
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author Islam, Saurav
Steinebronn, Emma
Yang, Kaijie
Neupane, Bimal
Chamorro, Juan
Ghosh, Supriya
Mkhoyan, K. Andre
McQueen, Tyrel M.
Wang, Yuanxi
Liu, Chaoxing
Samarth, Nitin
author_facet Islam, Saurav
Steinebronn, Emma
Yang, Kaijie
Neupane, Bimal
Chamorro, Juan
Ghosh, Supriya
Mkhoyan, K. Andre
McQueen, Tyrel M.
Wang, Yuanxi
Liu, Chaoxing
Samarth, Nitin
contents We use a concerted theory-experiment effort to investigate the formation of chiral real space spin texture when the archetypal Dirac semimetal Cd$_3$As$_2$ is interfaced with In$_{1-x}$Mn$_x$As, a ferromagnetic semiconductor with perpendicular magnetic anisotropy. Our calculations reveal a nonzero off-diagonal spin susceptibility in the Cd$_3$As$_2$ layer due to the Rashba spin-orbit coupling from broken inversion symmetry. This implies the presence of a Dzyaloshinskii-Moriya interaction between local moments in the In$_{1-x}$Mn$_x$As layer, mediated by Dirac electrons in the vicinal Cd$_3$As$_2$ layer, potentially creating the conditions for a real space chiral spin texture. Using electrical magnetoresistance measurements at low temperature, we observe an emergent excess contribution to the transverse magneto-resistance whose behavior is consistent with a topological Hall effect arising from the formation of an interfacial chiral spin texture. This excess Hall voltage varies with gate voltage, indicating a promising electrostatically-tunable platform for understanding the interplay between the helical momentum space states of a Dirac semimetal and chiral real space spin textures in a ferromagnet.
format Preprint
id arxiv_https___arxiv_org_abs_2403_18485
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Rashba spin splitting-induced topological Hall effect in a Dirac semimetal-ferromagnetic semiconductor heterostructure
Islam, Saurav
Steinebronn, Emma
Yang, Kaijie
Neupane, Bimal
Chamorro, Juan
Ghosh, Supriya
Mkhoyan, K. Andre
McQueen, Tyrel M.
Wang, Yuanxi
Liu, Chaoxing
Samarth, Nitin
Mesoscale and Nanoscale Physics
We use a concerted theory-experiment effort to investigate the formation of chiral real space spin texture when the archetypal Dirac semimetal Cd$_3$As$_2$ is interfaced with In$_{1-x}$Mn$_x$As, a ferromagnetic semiconductor with perpendicular magnetic anisotropy. Our calculations reveal a nonzero off-diagonal spin susceptibility in the Cd$_3$As$_2$ layer due to the Rashba spin-orbit coupling from broken inversion symmetry. This implies the presence of a Dzyaloshinskii-Moriya interaction between local moments in the In$_{1-x}$Mn$_x$As layer, mediated by Dirac electrons in the vicinal Cd$_3$As$_2$ layer, potentially creating the conditions for a real space chiral spin texture. Using electrical magnetoresistance measurements at low temperature, we observe an emergent excess contribution to the transverse magneto-resistance whose behavior is consistent with a topological Hall effect arising from the formation of an interfacial chiral spin texture. This excess Hall voltage varies with gate voltage, indicating a promising electrostatically-tunable platform for understanding the interplay between the helical momentum space states of a Dirac semimetal and chiral real space spin textures in a ferromagnet.
title Rashba spin splitting-induced topological Hall effect in a Dirac semimetal-ferromagnetic semiconductor heterostructure
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2403.18485