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| Auteurs principaux: | , , , , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2024
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| Sujets: | |
| Accès en ligne: | https://arxiv.org/abs/2403.18964 |
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| _version_ | 1866916182133571584 |
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| author | Liu, Tianhan Adhikari, Yuwaraj Wang, Hailong Jiang, Yiyang Hua, Zhenqi Liu, Haoyang Schlottmann, Pedro Gao, Hanwei Weiss, Paul S. Yan, Binghai Zhao, Jianhua Xiong, Peng |
| author_facet | Liu, Tianhan Adhikari, Yuwaraj Wang, Hailong Jiang, Yiyang Hua, Zhenqi Liu, Haoyang Schlottmann, Pedro Gao, Hanwei Weiss, Paul S. Yan, Binghai Zhao, Jianhua Xiong, Peng |
| contents | Electrical generation and transduction of polarized electron spins in semiconductors are of central interest in spintronics and quantum information science. While spin generation in semiconductors has been frequently realized via electrical injection from a ferromagnet, there are significant advantages in nonmagnetic pathways of creating spin polarization. One such pathway exploits the interplay of electron spin with chirality in electronic structures or real space. Here, utilizing chirality-induced spin selectivity (CISS), we demonstrate efficient creation of spin accumulation in n-doped GaAs via electric current injection from a normal metal (Au) electrode through a self-assembled monolayer of chiral molecules (α-helix L-polyalanine, AHPA-L). The resulting spin polarization is detected as a Hanle effect in the n-GaAs, which is found to obey a distinct universal scaling with temperature and bias current consistent with chirality-induced spin accumulation. The experiment constitutes a definitive observation of CISS in a fully nonmagnetic device structure and demonstration of its ability to generate spin accumulation in a conventional semiconductor. The results thus place key constraints on the physical mechanism of CISS and present a new scheme for magnet-free semiconductor spintronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_18964 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Chirality-Induced Magnet-Free Spin Generation in a Semiconductor Liu, Tianhan Adhikari, Yuwaraj Wang, Hailong Jiang, Yiyang Hua, Zhenqi Liu, Haoyang Schlottmann, Pedro Gao, Hanwei Weiss, Paul S. Yan, Binghai Zhao, Jianhua Xiong, Peng Mesoscale and Nanoscale Physics Materials Science Quantum Physics Electrical generation and transduction of polarized electron spins in semiconductors are of central interest in spintronics and quantum information science. While spin generation in semiconductors has been frequently realized via electrical injection from a ferromagnet, there are significant advantages in nonmagnetic pathways of creating spin polarization. One such pathway exploits the interplay of electron spin with chirality in electronic structures or real space. Here, utilizing chirality-induced spin selectivity (CISS), we demonstrate efficient creation of spin accumulation in n-doped GaAs via electric current injection from a normal metal (Au) electrode through a self-assembled monolayer of chiral molecules (α-helix L-polyalanine, AHPA-L). The resulting spin polarization is detected as a Hanle effect in the n-GaAs, which is found to obey a distinct universal scaling with temperature and bias current consistent with chirality-induced spin accumulation. The experiment constitutes a definitive observation of CISS in a fully nonmagnetic device structure and demonstration of its ability to generate spin accumulation in a conventional semiconductor. The results thus place key constraints on the physical mechanism of CISS and present a new scheme for magnet-free semiconductor spintronics. |
| title | Chirality-Induced Magnet-Free Spin Generation in a Semiconductor |
| topic | Mesoscale and Nanoscale Physics Materials Science Quantum Physics |
| url | https://arxiv.org/abs/2403.18964 |