Rydberg exciton states and near-infrared light-emitting diode in monolayer MoTe2 devices
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arXiv
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| Autori principali: | , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866914731856494592 |
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| author | Rodriguez, Sebastian Yepez Campbell, Marshall A. Liu, Jinyu Jauregui, Luis A. |
| author_facet | Rodriguez, Sebastian Yepez Campbell, Marshall A. Liu, Jinyu Jauregui, Luis A. |
| contents | Excitons, or bound electron-hole pairs, play a crucial role in the optical response of monolayer, 2H-phase transition-metal dichalcogenides (TMDs). They hold significant promise for the development of novel quantum opto-electronic devices due to their large binding energies and strong spin-orbit coupling. Among the monolayer TMDs, MoTe2 stands out because of its bandgap in the near-infrared (NIR) regime. Here, we report the experimental observation of NIR Rydberg excitons and conduction band-split charged excitons, in high-quality, boron nitride (BN)-encapsulated monolayer MoTe2 devices, probed by photoluminescence and electroluminescence spectroscopy. By employing a graphite bottom gate, we successfully modulate the emission intensity of various excitonic species. Additionally, our device fabrication process within an argon-filled glove box ensures clean TMD/metal electrode interfaces, enabling the construction of p-n junctions near the electrodes. Our work significantly advances our understanding of excitons in monolayer TMDs and contributes to the application of MoTe2 in NIR quantum opto-electronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_19189 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Rydberg exciton states and near-infrared light-emitting diode in monolayer MoTe2 devices Rodriguez, Sebastian Yepez Campbell, Marshall A. Liu, Jinyu Jauregui, Luis A. Materials Science Mesoscale and Nanoscale Physics Excitons, or bound electron-hole pairs, play a crucial role in the optical response of monolayer, 2H-phase transition-metal dichalcogenides (TMDs). They hold significant promise for the development of novel quantum opto-electronic devices due to their large binding energies and strong spin-orbit coupling. Among the monolayer TMDs, MoTe2 stands out because of its bandgap in the near-infrared (NIR) regime. Here, we report the experimental observation of NIR Rydberg excitons and conduction band-split charged excitons, in high-quality, boron nitride (BN)-encapsulated monolayer MoTe2 devices, probed by photoluminescence and electroluminescence spectroscopy. By employing a graphite bottom gate, we successfully modulate the emission intensity of various excitonic species. Additionally, our device fabrication process within an argon-filled glove box ensures clean TMD/metal electrode interfaces, enabling the construction of p-n junctions near the electrodes. Our work significantly advances our understanding of excitons in monolayer TMDs and contributes to the application of MoTe2 in NIR quantum opto-electronic devices. |
| title | Rydberg exciton states and near-infrared light-emitting diode in monolayer MoTe2 devices |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2403.19189 |