Origin of multiple Lifshitz transitions in the Weyl semi-metal RhSi

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Hauptverfasser: Patra, Krishnendu, Christiansson, Viktor, Aryasetiawan, Ferdi, Mahadevan, Priya
Format: Preprint
Veröffentlicht: 2024
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author Patra, Krishnendu
Christiansson, Viktor
Aryasetiawan, Ferdi
Mahadevan, Priya
author_facet Patra, Krishnendu
Christiansson, Viktor
Aryasetiawan, Ferdi
Mahadevan, Priya
contents It is known from density functional theory (DFT) calculations that RhSi has a multifold degenerate Dirac point at the Fermi energy, with the dominant states in the low-energy region displaying mostly Rh $d$ character. Using DFT+U, we calculate the band structure by considering an effective local interaction on the Rh $d$ states, with a realistic effective Hubbard $U_\textrm{eff}=2.5$ eV derived from a constrained random-phase approximation calculation, and find the emergence of a double hump structure close to the Fermi energy.By further deriving a low-energy tight-binding model from our first-principles results, we show that the double hump is a direct consequence of a competition between the Rh $d$-Rh $d$ and Rh $d$-Si $p$ interactions, which differ in their momentum dependence. As a consequence, through an artificial tuning of the energy level of the Si $p$ orbitals this hump structure can be suppressed due to the effectively reduced Rh $d$ -Si $p$ interaction.This peculiar low-energy electronic structure additionally results in that a small hole/electron doping ($\sim$ 0.1 $\%$) can tune the Fermi surface topology, going from closed to open Fermi surfaces, which has dramatic consequences for the thermal transport.
format Preprint
id arxiv_https___arxiv_org_abs_2403_19370
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Origin of multiple Lifshitz transitions in the Weyl semi-metal RhSi
Patra, Krishnendu
Christiansson, Viktor
Aryasetiawan, Ferdi
Mahadevan, Priya
Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
It is known from density functional theory (DFT) calculations that RhSi has a multifold degenerate Dirac point at the Fermi energy, with the dominant states in the low-energy region displaying mostly Rh $d$ character. Using DFT+U, we calculate the band structure by considering an effective local interaction on the Rh $d$ states, with a realistic effective Hubbard $U_\textrm{eff}=2.5$ eV derived from a constrained random-phase approximation calculation, and find the emergence of a double hump structure close to the Fermi energy.By further deriving a low-energy tight-binding model from our first-principles results, we show that the double hump is a direct consequence of a competition between the Rh $d$-Rh $d$ and Rh $d$-Si $p$ interactions, which differ in their momentum dependence. As a consequence, through an artificial tuning of the energy level of the Si $p$ orbitals this hump structure can be suppressed due to the effectively reduced Rh $d$ -Si $p$ interaction.This peculiar low-energy electronic structure additionally results in that a small hole/electron doping ($\sim$ 0.1 $\%$) can tune the Fermi surface topology, going from closed to open Fermi surfaces, which has dramatic consequences for the thermal transport.
title Origin of multiple Lifshitz transitions in the Weyl semi-metal RhSi
topic Strongly Correlated Electrons
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2403.19370