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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2403.19465 |
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| _version_ | 1866911818486644736 |
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| author | Kourmoulakis, George Psilodimitrakopoulos, Sotiris Maragkakis, George Miltos Mouchliadis, Leonidas Michail, Antonios Christodoulides, Joseph A Tripathi, Manoj Dalton, Alan B Parthenios, John Papagelis, Konstantinos Stratakis, Emmanuel Kioseoglou, George |
| author_facet | Kourmoulakis, George Psilodimitrakopoulos, Sotiris Maragkakis, George Miltos Mouchliadis, Leonidas Michail, Antonios Christodoulides, Joseph A Tripathi, Manoj Dalton, Alan B Parthenios, John Papagelis, Konstantinos Stratakis, Emmanuel Kioseoglou, George |
| contents | Two-dimensional (2D) graphene and graphene-related materials (GRMs) show great promise for future electronic devices. Nevertheless, GRMs result distinct properties under the influence of the substrate that serves as support through uneven compression/ elongation of GRMs surface atoms. Strain in GRM monolayers is the most common feature that alters the interatomic distances, band structure, providing a new degree of freedom that allows regulation of their electronic properties and introducing the field of straintronics. Having an all-optical detection, a minimally invasive tool that rapidly probes strain in large areas of GRM monolayers, would be of great importance in the research and development of novel 2D devices. Here, we use Polarization-resolved Second Harmonic Generation (P-SHG) optical imaging to identify strain distribution, induced in a single layer of WS2 placed on a pre-patterned Si/SiO2 substrate with cylindrical wells. By fitting the P-SHG data pixel-by-pixel, we produce spatially resolved images of the crystal armchair direction. In regions where the WS2 monolayer conforms to the pattern topography, a distinct cross-shaped pattern is evident in the armchair image owing to strain. The presence of strain in these regions is independently confirmed using a combination of atomic force microscopy and Raman mapping. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2403_19465 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Strain distribution in WS2 monolayers detected through Polarization-resolved Second Harmonic Generation Kourmoulakis, George Psilodimitrakopoulos, Sotiris Maragkakis, George Miltos Mouchliadis, Leonidas Michail, Antonios Christodoulides, Joseph A Tripathi, Manoj Dalton, Alan B Parthenios, John Papagelis, Konstantinos Stratakis, Emmanuel Kioseoglou, George Applied Physics Materials Science Two-dimensional (2D) graphene and graphene-related materials (GRMs) show great promise for future electronic devices. Nevertheless, GRMs result distinct properties under the influence of the substrate that serves as support through uneven compression/ elongation of GRMs surface atoms. Strain in GRM monolayers is the most common feature that alters the interatomic distances, band structure, providing a new degree of freedom that allows regulation of their electronic properties and introducing the field of straintronics. Having an all-optical detection, a minimally invasive tool that rapidly probes strain in large areas of GRM monolayers, would be of great importance in the research and development of novel 2D devices. Here, we use Polarization-resolved Second Harmonic Generation (P-SHG) optical imaging to identify strain distribution, induced in a single layer of WS2 placed on a pre-patterned Si/SiO2 substrate with cylindrical wells. By fitting the P-SHG data pixel-by-pixel, we produce spatially resolved images of the crystal armchair direction. In regions where the WS2 monolayer conforms to the pattern topography, a distinct cross-shaped pattern is evident in the armchair image owing to strain. The presence of strain in these regions is independently confirmed using a combination of atomic force microscopy and Raman mapping. |
| title | Strain distribution in WS2 monolayers detected through Polarization-resolved Second Harmonic Generation |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2403.19465 |