Rotating-modulated Higher-Order Topological States in a Split-ring Photonic Insulator

Fuente: arXiv
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Main Authors: Li, Hui Chang, Zhou, Xiang, Chi, Hai Lin, Wang, Wen Wen, Shen, Yun, Deng, Xiao Hua
Format: Preprint
Published: 2024
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_version_ 1866910395122319360
author Li, Hui Chang
Zhou, Xiang
Chi, Hai Lin
Wang, Wen Wen
Shen, Yun
Deng, Xiao Hua
author_facet Li, Hui Chang
Zhou, Xiang
Chi, Hai Lin
Wang, Wen Wen
Shen, Yun
Deng, Xiao Hua
contents The emerging field of topology has brought device effects to a new level. Higher-order topological insulators (HOTIs) go beyond traditional descriptions of bulk-edge correspondence, broadening the understanding of topologically insulating phases. In this paper, a second-order split-ring photonic crystal (SSPC) with zero-dimensional (0D) corner states and one-dimensional (1D) edge states is proposed. Based on the coupling strength determined by the opening direction between the split-rings, the electronic transition strength of the electronic system is imitated, and the topological trivial and non-trivial transformation of the topological two-dimensional (2D) SSH model are realized by using the rotating split-ring lattice. Theory and simulation find that SSPC has non-trivial topological edge states that can be quantified by bulk polarization. As the opening direction of the split-rings gradually changes within one period, there will be transitions between four different topological polarizations of the lowest energy bands, which can be conveniently used to achieve transitions between different topological phases. Our research can be extended to higher dimensions and broaden research paths for higher-order photonic topological insulators and semimetals.
format Preprint
id arxiv_https___arxiv_org_abs_2404_00229
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Rotating-modulated Higher-Order Topological States in a Split-ring Photonic Insulator
Li, Hui Chang
Zhou, Xiang
Chi, Hai Lin
Wang, Wen Wen
Shen, Yun
Deng, Xiao Hua
Optics
Applied Physics
The emerging field of topology has brought device effects to a new level. Higher-order topological insulators (HOTIs) go beyond traditional descriptions of bulk-edge correspondence, broadening the understanding of topologically insulating phases. In this paper, a second-order split-ring photonic crystal (SSPC) with zero-dimensional (0D) corner states and one-dimensional (1D) edge states is proposed. Based on the coupling strength determined by the opening direction between the split-rings, the electronic transition strength of the electronic system is imitated, and the topological trivial and non-trivial transformation of the topological two-dimensional (2D) SSH model are realized by using the rotating split-ring lattice. Theory and simulation find that SSPC has non-trivial topological edge states that can be quantified by bulk polarization. As the opening direction of the split-rings gradually changes within one period, there will be transitions between four different topological polarizations of the lowest energy bands, which can be conveniently used to achieve transitions between different topological phases. Our research can be extended to higher dimensions and broaden research paths for higher-order photonic topological insulators and semimetals.
title Rotating-modulated Higher-Order Topological States in a Split-ring Photonic Insulator
topic Optics
Applied Physics
url https://arxiv.org/abs/2404.00229