Electron Collimation in Twisted Bilayer Graphene via Gate-defined Moiré Barriers
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arXiv
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| Autori principali: | , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866910392881512448 |
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| author | Ren, Wei Zhang, Xi Zhu, Ziyan Khan, Moosa Watanabe, Kenji Taniguchi, Takashi Kaxiras, Efthimios Luskin, Mitchell Wang, Ke |
| author_facet | Ren, Wei Zhang, Xi Zhu, Ziyan Khan, Moosa Watanabe, Kenji Taniguchi, Takashi Kaxiras, Efthimios Luskin, Mitchell Wang, Ke |
| contents | Electron collimation via a graphene pn-junction allows electrostatic control of ballistic electron trajectories akin to that of an optical circuit. Similar manipulation of novel correlated electronic phases in twisted-bilayer graphene (tBLG) can provide additional probes to the underlying physics and device components towards advanced quantum electronics. In this work, we demonstrate collimation of the electron flow via gate-defined moiré barriers in a tBLG device, utilizing the band-insulator gap of the moiré superlattice. A single junction can be tuned to host a chosen combination of conventional pseudo barrier and moiré tunnel barriers, from which we demonstrate improved collimation efficiency. By measuring transport through two consecutive moiré collimators separated by 1 um, we demonstrate evidence of electron collimation in tBLG in the presence of realistic twist-angle inhomogeneity. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_00519 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Electron Collimation in Twisted Bilayer Graphene via Gate-defined Moiré Barriers Ren, Wei Zhang, Xi Zhu, Ziyan Khan, Moosa Watanabe, Kenji Taniguchi, Takashi Kaxiras, Efthimios Luskin, Mitchell Wang, Ke Mesoscale and Nanoscale Physics Electron collimation via a graphene pn-junction allows electrostatic control of ballistic electron trajectories akin to that of an optical circuit. Similar manipulation of novel correlated electronic phases in twisted-bilayer graphene (tBLG) can provide additional probes to the underlying physics and device components towards advanced quantum electronics. In this work, we demonstrate collimation of the electron flow via gate-defined moiré barriers in a tBLG device, utilizing the band-insulator gap of the moiré superlattice. A single junction can be tuned to host a chosen combination of conventional pseudo barrier and moiré tunnel barriers, from which we demonstrate improved collimation efficiency. By measuring transport through two consecutive moiré collimators separated by 1 um, we demonstrate evidence of electron collimation in tBLG in the presence of realistic twist-angle inhomogeneity. |
| title | Electron Collimation in Twisted Bilayer Graphene via Gate-defined Moiré Barriers |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2404.00519 |