Intrinsic conductance of ferroelectric domain walls
Fuente:
arXiv
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866917627119534080 |
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| author | Yang, Feng |
| author_facet | Yang, Feng |
| contents | Ferroelectric domain walls hold great promise for innovative applications in ferroelectric devices. However, the underlying mechanisms behind the observed giant conductance of charged domain walls remain poorly understood. Using a first-principles approach that incorporates Boltzmann transport theory and the relaxation time approximation, we determine the carrier concentration, mobility, and conductivity of domain walls with head-to-head and tail-to-tail polarization orientations. Our systematic exploration reveals that the accumulation of carriers, particularly their concentration, plays a dominant role in the domain wall conductance mechanism. However, the observed conductance differences between head-to-head and tail-to-tail domain walls are primarily due to differences in carrier mobility. The width of the domain wall is a key factor determining the device scale. Our calculated domain wall width is significantly smaller than previously reported values. This method, not limited to a certain ferroelectric material, can be used for the optimization and application development of various domain wall materials and devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_00821 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Intrinsic conductance of ferroelectric domain walls Yang, Feng Materials Science Applied Physics Ferroelectric domain walls hold great promise for innovative applications in ferroelectric devices. However, the underlying mechanisms behind the observed giant conductance of charged domain walls remain poorly understood. Using a first-principles approach that incorporates Boltzmann transport theory and the relaxation time approximation, we determine the carrier concentration, mobility, and conductivity of domain walls with head-to-head and tail-to-tail polarization orientations. Our systematic exploration reveals that the accumulation of carriers, particularly their concentration, plays a dominant role in the domain wall conductance mechanism. However, the observed conductance differences between head-to-head and tail-to-tail domain walls are primarily due to differences in carrier mobility. The width of the domain wall is a key factor determining the device scale. Our calculated domain wall width is significantly smaller than previously reported values. This method, not limited to a certain ferroelectric material, can be used for the optimization and application development of various domain wall materials and devices. |
| title | Intrinsic conductance of ferroelectric domain walls |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2404.00821 |