Excitons, Optical Spectra, and Electronic Properties of Semiconducting Hf-based MXenes
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arXiv
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| Formato: | Preprint |
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2024
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| _version_ | 1866913295757213696 |
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| author | Kumar, Nilesh Kolos, Miroslav Bhattacharya, Sitangshu Karlický, František |
| author_facet | Kumar, Nilesh Kolos, Miroslav Bhattacharya, Sitangshu Karlický, František |
| contents | Semiconducting MXenes are an intriguing two-dimensional (2D) material class with promising electronic and optoelectronic properties. Here, we focused on recently prepared Hf-based MXenes, namely Hf$_3$C$_2$O$_2$ and Hf$_2$CO$_2$. Using the first-principles calculation and excited state corrections, we proved its dynamical stability, reconciled its semiconducting behavior, and obtained fundamental gaps by the many-body GW method (indirect 1.1 eV and 2.2 eV, respectively, direct 1.4 eV and 3.5 eV, respectively). Using the Bethe-Salpeter equation (BSE) we subsequently provided optical gaps (0.9 eV and 2.7eV, respectively), exciton binding energies, absorption spectra, and other properties of excitons in both Hf-based MXenes. The indirect character of both 2D materials further allowed a significant decrease of excitation energies by considering indirect excitons with exciton momentum along the $Γ$-M path in the Brillouin zone. The first bright excitons are strongly delocalized in real space while contributed by only a limited number of electron-hole pairs around the M point in the k-space from the valence and conduction band. A diverse range of excitonic states in Hf$_3$C$_2$O$_2$ MXene lead to a 4\% and 13\% absorptance for the first and second peaks in the infrared region of absorption spectra, respectively. In contrast, a prominent 28\% absorptance peak in the visible region appears in Hf$_2$CO$_2$ MXene. Results from radiative lifetime calculations indicate the promising potential of these materials in optoelectric devices requiring sustained and efficient exciton behavior. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2404_01797 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Excitons, Optical Spectra, and Electronic Properties of Semiconducting Hf-based MXenes Kumar, Nilesh Kolos, Miroslav Bhattacharya, Sitangshu Karlický, František Materials Science Semiconducting MXenes are an intriguing two-dimensional (2D) material class with promising electronic and optoelectronic properties. Here, we focused on recently prepared Hf-based MXenes, namely Hf$_3$C$_2$O$_2$ and Hf$_2$CO$_2$. Using the first-principles calculation and excited state corrections, we proved its dynamical stability, reconciled its semiconducting behavior, and obtained fundamental gaps by the many-body GW method (indirect 1.1 eV and 2.2 eV, respectively, direct 1.4 eV and 3.5 eV, respectively). Using the Bethe-Salpeter equation (BSE) we subsequently provided optical gaps (0.9 eV and 2.7eV, respectively), exciton binding energies, absorption spectra, and other properties of excitons in both Hf-based MXenes. The indirect character of both 2D materials further allowed a significant decrease of excitation energies by considering indirect excitons with exciton momentum along the $Γ$-M path in the Brillouin zone. The first bright excitons are strongly delocalized in real space while contributed by only a limited number of electron-hole pairs around the M point in the k-space from the valence and conduction band. A diverse range of excitonic states in Hf$_3$C$_2$O$_2$ MXene lead to a 4\% and 13\% absorptance for the first and second peaks in the infrared region of absorption spectra, respectively. In contrast, a prominent 28\% absorptance peak in the visible region appears in Hf$_2$CO$_2$ MXene. Results from radiative lifetime calculations indicate the promising potential of these materials in optoelectric devices requiring sustained and efficient exciton behavior. |
| title | Excitons, Optical Spectra, and Electronic Properties of Semiconducting Hf-based MXenes |
| topic | Materials Science |
| url | https://arxiv.org/abs/2404.01797 |