Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation

Fuente: arXiv
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Main Authors: Saleem, Muhammad Farooq, Ashraf, Ghulam Abbas, Iqbal, Muhammad Faisal, Khan, Rashid, Javid, Muhammad, Wang, Tianwu
Format: Preprint
Published: 2024
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_version_ 1866929301828403200
author Saleem, Muhammad Farooq
Ashraf, Ghulam Abbas
Iqbal, Muhammad Faisal
Khan, Rashid
Javid, Muhammad
Wang, Tianwu
author_facet Saleem, Muhammad Farooq
Ashraf, Ghulam Abbas
Iqbal, Muhammad Faisal
Khan, Rashid
Javid, Muhammad
Wang, Tianwu
contents InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentration can affect the strength of the piezoelectric field and result in THz emission. Experimental parameters such as pump fluence, laser energy, excitation power, pump polarization angle, and incident angle can be tuned to further optimize the THz emission. This review summarizes the effects of physical and experimental parameters of THz emission on InGaN QWs. Comparison and relationship between photoluminescence properties and THz emission in QWs are given, which further explains the origin of THz emission in InGaN QWs.
format Preprint
id arxiv_https___arxiv_org_abs_2404_02398
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation
Saleem, Muhammad Farooq
Ashraf, Ghulam Abbas
Iqbal, Muhammad Faisal
Khan, Rashid
Javid, Muhammad
Wang, Tianwu
Optics
Applied Physics
InGaN quantum wells (QWs) grown on c-plane sapphire substrate experience strain due to the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes to THz emission under ultrafast excitation. Physical parameters such as QW width, period number, and Indium concentration can affect the strength of the piezoelectric field and result in THz emission. Experimental parameters such as pump fluence, laser energy, excitation power, pump polarization angle, and incident angle can be tuned to further optimize the THz emission. This review summarizes the effects of physical and experimental parameters of THz emission on InGaN QWs. Comparison and relationship between photoluminescence properties and THz emission in QWs are given, which further explains the origin of THz emission in InGaN QWs.
title Factors Affecting Terahertz Emission from InGaN Quantum Wells under Ultrafast Excitation
topic Optics
Applied Physics
url https://arxiv.org/abs/2404.02398