In-situ tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas
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| Main Authors: | , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2024
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| _version_ | 1866913297121411072 |
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| author | Wang, Ting-Ting Dong, Sining Li, Chong Yue, Wen-Cheng Lyu, Yang-Yang Wang, Chen-Guang Zeng, Chang-Kun Yuan, Zixiong Zhu, Wei Xiao, Zhi-Li Lu, Xiaoli Liu, Bin Lu, Hai Wang, Hua-Bing Wu, Peiheng Kwok, Wai-Kwong Wang, Yong-Lei |
| author_facet | Wang, Ting-Ting Dong, Sining Li, Chong Yue, Wen-Cheng Lyu, Yang-Yang Wang, Chen-Guang Zeng, Chang-Kun Yuan, Zixiong Zhu, Wei Xiao, Zhi-Li Lu, Xiaoli Liu, Bin Lu, Hai Wang, Hua-Bing Wu, Peiheng Kwok, Wai-Kwong Wang, Yong-Lei |
| contents | Materials with in-plane electrical anisotropy have great potential for designing artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to produce extremely large electrical anisotropy via grating gating of a semiconductor two-dimensional electron gas (2DEG) of AlGaN/GaN. We show that periodically modulated electric potential in the 2DEG induces in-plane electrical anisotropy, which is significantly enhanced in a magnetic field, leading to an ultra large electrical anisotropy. This is induced by a giant positive magnetoresistance and a giant negative magnetoresistance under two orthogonally oriented in-plane current flows, respectively. This giant electrical anisotropy is in-situ tunable by tailoring both the grating gate voltage and the magnetic field. Our semiconductor device with controllable giant electrical anisotropy will stimulate new device applications, such as multi-terminal memtransistors and bionic synapses. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_02427 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | In-situ tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas Wang, Ting-Ting Dong, Sining Li, Chong Yue, Wen-Cheng Lyu, Yang-Yang Wang, Chen-Guang Zeng, Chang-Kun Yuan, Zixiong Zhu, Wei Xiao, Zhi-Li Lu, Xiaoli Liu, Bin Lu, Hai Wang, Hua-Bing Wu, Peiheng Kwok, Wai-Kwong Wang, Yong-Lei Mesoscale and Nanoscale Physics Materials Science Applied Physics Materials with in-plane electrical anisotropy have great potential for designing artificial synaptic devices. However, natural materials with strong intrinsic in-plane electrical anisotropy are rare. We introduce a simple strategy to produce extremely large electrical anisotropy via grating gating of a semiconductor two-dimensional electron gas (2DEG) of AlGaN/GaN. We show that periodically modulated electric potential in the 2DEG induces in-plane electrical anisotropy, which is significantly enhanced in a magnetic field, leading to an ultra large electrical anisotropy. This is induced by a giant positive magnetoresistance and a giant negative magnetoresistance under two orthogonally oriented in-plane current flows, respectively. This giant electrical anisotropy is in-situ tunable by tailoring both the grating gate voltage and the magnetic field. Our semiconductor device with controllable giant electrical anisotropy will stimulate new device applications, such as multi-terminal memtransistors and bionic synapses. |
| title | In-situ tunable giant electrical anisotropy in a grating gated AlGaN/GaN two-dimensional electron gas |
| topic | Mesoscale and Nanoscale Physics Materials Science Applied Physics |
| url | https://arxiv.org/abs/2404.02427 |