Nanophotonic inspection of deep-subwavelength integrated optoelectronic chips

Fuente: arXiv
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Auteurs principaux: Che, Ying, Zhang, Tianyue, Liu, Xiaowei, Hu, Dejiao, Song, Shichao, Cai, Yan, Cao, Yaoyu, Zhang, Jie, Chu, Shi-Wei, Li, Xiangping
Format: Preprint
Publié: 2024
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author Che, Ying
Zhang, Tianyue
Liu, Xiaowei
Hu, Dejiao
Song, Shichao
Cai, Yan
Cao, Yaoyu
Zhang, Jie
Chu, Shi-Wei
Li, Xiangping
author_facet Che, Ying
Zhang, Tianyue
Liu, Xiaowei
Hu, Dejiao
Song, Shichao
Cai, Yan
Cao, Yaoyu
Zhang, Jie
Chu, Shi-Wei
Li, Xiangping
contents Artificial nanostructures with ultrafine and deep-subwavelength feature sizes have emerged as a paradigm-shifting platform to advanced light field management, becoming a key building block for high-performance integrated optoelectronics and flat optics. However, direct optical inspection of such integrated chips with densely packed complex and small features remains a missing metrology gap that hinders quick feedback between design and fabrications. Here, we demonstrate that photothermal nonlinear scattering microscopy can be utilized for direct imaging and resolving of integrated optoelectronic chips beyond the diffraction limit. We reveal that the inherent coupling among deep-subwavelength nanostructures supporting leaky resonances allows for the pronounced heating effect to access reversible nonlinear modulations of the confocal reflection intensity, leading to optical resolving power down to 80 nm (~lambda/7). The versatility of this approach has been exemplified by direct imaging of silicon grating couplers and metalens with a minimum critical dimension of 100 nm, as well as central processing unit (CPU) chip with 45 nm technology, unfolding the long-sought possibility of in-situ, non-destructive, high-throughput optical inspection of integrated optoelectronic chips and nanophotonic chips.
format Preprint
id arxiv_https___arxiv_org_abs_2404_02528
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Nanophotonic inspection of deep-subwavelength integrated optoelectronic chips
Che, Ying
Zhang, Tianyue
Liu, Xiaowei
Hu, Dejiao
Song, Shichao
Cai, Yan
Cao, Yaoyu
Zhang, Jie
Chu, Shi-Wei
Li, Xiangping
Optics
Applied Physics
Artificial nanostructures with ultrafine and deep-subwavelength feature sizes have emerged as a paradigm-shifting platform to advanced light field management, becoming a key building block for high-performance integrated optoelectronics and flat optics. However, direct optical inspection of such integrated chips with densely packed complex and small features remains a missing metrology gap that hinders quick feedback between design and fabrications. Here, we demonstrate that photothermal nonlinear scattering microscopy can be utilized for direct imaging and resolving of integrated optoelectronic chips beyond the diffraction limit. We reveal that the inherent coupling among deep-subwavelength nanostructures supporting leaky resonances allows for the pronounced heating effect to access reversible nonlinear modulations of the confocal reflection intensity, leading to optical resolving power down to 80 nm (~lambda/7). The versatility of this approach has been exemplified by direct imaging of silicon grating couplers and metalens with a minimum critical dimension of 100 nm, as well as central processing unit (CPU) chip with 45 nm technology, unfolding the long-sought possibility of in-situ, non-destructive, high-throughput optical inspection of integrated optoelectronic chips and nanophotonic chips.
title Nanophotonic inspection of deep-subwavelength integrated optoelectronic chips
topic Optics
Applied Physics
url https://arxiv.org/abs/2404.02528