Imagen de Portada

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates

Fuente: arXiv

Guardado en:

Detalles Bibliográficos
Autores principales:	Cardinael, Pieter, Yadav, Sachin, Hahn, Herwig, Zhao, Ming, Banerjee, Sourish, Esfeh, Babak Kazemi, Mauder, Christof, Sullivan, Barry O, Peralagu, Uthayasankaran, Vohra, Anurag, Langer, Robert, Collaert, Nadine, Parvais, Bertrand, Raskin, Jean-Pierre
Formato:	Preprint
Publicado:	2024
Materias:	Applied Physics
Acceso en línea:	Acceder al recurso
Etiquetas:	Agregar Etiqueta Sin Etiquetas, Sea el primero en etiquetar este registro!

Ejemplares similares

Metal‐Organic Chemical Vapor Deposition Regrowth of Highly Doped n+ (In)GaN Source/Drain Layers for Radio Frequency Transistors
por: Sourish Banerjee, et al.
Publicado: (2024)

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy
por: Gačević, Ž., et al.
Publicado: (2024)

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
por: Bhuiyan, A F M Anhar Uddin, et al.
Publicado: (2022)

Simplified EPFL GaN HEMT Model
por: Jazaeri, Farzan, et al.
Publicado: (2024)

Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
por: Chen, Yu-Hsin, et al.
Publicado: (2025)

Influences of nitridation and thermal annealing on GaN buffer layers and the property of subsequent GaN epilayers grown by MOCVD
por: Dong Sing Wuu
Publicado: (1999)

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
por: Cao, Can, et al.
Publicado: (2026)

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
por: Matys, Maciej, et al.
Publicado: (2024)

Strain distribution in GaN/AlN superlattices grown on AlN/sapphire templates: comparison of X-ray diffraction and photoluminescence studies
por: Wierzbicka, Aleksandra, et al.
Publicado: (2025)

P‐7.3: Numerical modeling of GaN growth by MOCVD on metal substrate
por: Xiubo Fang, et al.
Publicado: (2024)

Thermal transport in GaN/AlN HEMTs on 4H-SiC: Role of layer thickness and hetero-interfaces
por: Tran, Dat Q., et al.
Publicado: (2025)

Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
por: Singhal, Jashan, et al.
Publicado: (2022)

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
por: Orfao, B., et al.
Publicado: (2026)

Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface
por: Lu, Yi, et al.
Publicado: (2026)

Si/AlN p-n heterojunction interfaced with ultrathin SiO2
por: Abbasi, Haris Naeem, et al.
Publicado: (2024)

Effect of the Twist Crystallinity of N‐Polar AlN Underlayer on the Electrical Properties of GaN/AlN Structures
por: Taketo Kowaki, et al.
Publicado: (2024)

Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
por: Kim, Minho, et al.
Publicado: (2025)

Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack
por: Tetsuo Narita, et al.
Publicado: (2024)

In-vacuum surface flashover of SiN, AlN, and etched SiO2 thin films at micrometre scales
por: Kumar, Vijay, et al.
Publicado: (2025)

Scanning Transmission Electron Microscopy Analysis of the Si(111)–AlN–GaN Nanowire Interface Grown by Polarity‐ and Site‐Controlled Growth Method
por: Patrick Häuser, et al.
Publicado: (2024)

Enhancing the Forward Gate Bias Robustness in p‐GaN Gate High‐Electron‐Mobility Transistors through Doping Profile Engineering
por: Matteo Borga, et al.
Publicado: (2024)

Combustion synthesis of Eu,Si‐doped AlN blue phosphor with varying Eu and Si concentrations
por: Genki Saito, et al.
Publicado: (2025)

Electrical characterization of GaN/ALN heterostructures grown by molecular beam epitaxy on silicon substrates
por: J.B. Rojas-Trigos
Publicado: (2016)

Mg-doping and free-hole properties of hot-wall MOCVD GaN
por: Papamichail, Alexis, et al.
Publicado: (2022)

Intersubband optical absorption in the GaN/AlN qunatum wire with donor-doping
por: Ortakaya, Sami
Publicado: (2025)

GaN growth on (111) Si with very thin amorphous SiN layer by ECR plasma-assisted MBE
por: Masao Tamura
Publicado: (2001)

SiO2‐GaN Interface Improvement by Wet Cleaning and In Situ Annealing for GaN MOS Transistors
por: Mirjam Henn, et al.
Publicado: (2024)

Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $\gt10^{15}/cm^3$ free carrier concentration using close-coupled showerhead MOCVD reactor
por: Mukhopadhyay, Swarnav, et al.
Publicado: (2024)

Temperature Effects on GaN/AlN Heterojunction in a Piezomagnetic and Piezoelectric Semiconductor Composite Fiber
por: QiaoYun Zhang, et al.
Publicado: (2024)

Significant impact of Al1-xGaxN interlayer on GaN/AlN thermal boundary conductance
por: Adnan, Khalid Zobaid, et al.
Publicado: (2026)

Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer
por: Ki‐Sik Im, et al.
Publicado: (2024)

Numerical Investigation of Quasi‐Vertical GaN‐on‐Si MOSFET Incorporating AlGaN/GaN Polarization Interface and AlGaN Functional Layer
por: Zijun Lin, et al.
Publicado: (2026)

Temperature‐Dependent Transition in the Dominant Nonradiative Carrier Recombination Process in Ultrathin AlN/GaN/AlN‐Quantum Wells Studied by Phononic–Excitonic–Radiative Model
por: Masaya Chizaki, et al.
Publicado: (2025)

Metalorganic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures
por: Vangipuram, Vijay Gopal Thirupakuzi, et al.
Publicado: (2025)

Growth Mechanism of N‐Polar GaN on Vicinal N‐Polar AlN Templates in Metal‐Organic Vapor Phase Epitaxy
por: Minagi Miyamoto, et al.
Publicado: (2024)

Single photon emitters in thin GaAsN nanowire tubes grown on Si
por: Denis, Nadine, et al.
Publicado: (2024)

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications
por: Jmerik, V. N., et al.
Publicado: (2026)

Effect of magnetic field and impurities in InAs/GaAs and GaN/AlN self-assembled quantum dots
por: G. Linares-García
Publicado: (2019)

Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy
por: Aina Hiyama Zazuli, et al.
Publicado: (2024)

ZnSe epitaxial films grown by MBE on nitrogen treated Si(111) substrates
por: V. H. Méndez-García
Publicado: (1999)