Gate-tunable subband degeneracy in semiconductor nanowires

Fuente: arXiv
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Auteurs principaux: Wang, Yuhao, Song, Wenyu, Cao, Zhan, Yu, Zehao, Yang, Shuai, Li, Zonglin, Gao, Yichun, Li, Ruidong, Chen, Fangting, Geng, Zuhan, Yang, Lining, Xu, Jiaye, Wang, Zhaoyu, Zhang, Shan, Feng, Xiao, Wang, Tiantian, Zang, Yunyi, Li, Lin, Shang, Runan, Xue, Qi-Kun, Liu, Dong E., He, Ke, Zhang, Hao
Format: Preprint
Publié: 2024
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_version_ 1866911935378751488
author Wang, Yuhao
Song, Wenyu
Cao, Zhan
Yu, Zehao
Yang, Shuai
Li, Zonglin
Gao, Yichun
Li, Ruidong
Chen, Fangting
Geng, Zuhan
Yang, Lining
Xu, Jiaye
Wang, Zhaoyu
Zhang, Shan
Feng, Xiao
Wang, Tiantian
Zang, Yunyi
Li, Lin
Shang, Runan
Xue, Qi-Kun
Liu, Dong E.
He, Ke
Zhang, Hao
author_facet Wang, Yuhao
Song, Wenyu
Cao, Zhan
Yu, Zehao
Yang, Shuai
Li, Zonglin
Gao, Yichun
Li, Ruidong
Chen, Fangting
Geng, Zuhan
Yang, Lining
Xu, Jiaye
Wang, Zhaoyu
Zhang, Shan
Feng, Xiao
Wang, Tiantian
Zang, Yunyi
Li, Lin
Shang, Runan
Xue, Qi-Kun
Liu, Dong E.
He, Ke
Zhang, Hao
contents Degeneracy and symmetry have a profound relation in quantum systems. Here, we report gate-tunable subband degeneracy in PbTe nanowires with a nearly symmetric cross-sectional shape. The degeneracy is revealed in electron transport by the absence of a quantized plateau. Utilizing a dual gate design, we can apply an electric field to lift the degeneracy, reflected as emergence of the plateau. This degeneracy and its tunable lifting were challenging to observe in previous nanowire experiments, possibly due to disorder. Numerical simulations can qualitatively capture our observation, shedding light on device parameters for future applications.
format Preprint
id arxiv_https___arxiv_org_abs_2404_02760
institution arXiv
publishDate 2024
record_format arxiv
spellingShingle Gate-tunable subband degeneracy in semiconductor nanowires
Wang, Yuhao
Song, Wenyu
Cao, Zhan
Yu, Zehao
Yang, Shuai
Li, Zonglin
Gao, Yichun
Li, Ruidong
Chen, Fangting
Geng, Zuhan
Yang, Lining
Xu, Jiaye
Wang, Zhaoyu
Zhang, Shan
Feng, Xiao
Wang, Tiantian
Zang, Yunyi
Li, Lin
Shang, Runan
Xue, Qi-Kun
Liu, Dong E.
He, Ke
Zhang, Hao
Mesoscale and Nanoscale Physics
Degeneracy and symmetry have a profound relation in quantum systems. Here, we report gate-tunable subband degeneracy in PbTe nanowires with a nearly symmetric cross-sectional shape. The degeneracy is revealed in electron transport by the absence of a quantized plateau. Utilizing a dual gate design, we can apply an electric field to lift the degeneracy, reflected as emergence of the plateau. This degeneracy and its tunable lifting were challenging to observe in previous nanowire experiments, possibly due to disorder. Numerical simulations can qualitatively capture our observation, shedding light on device parameters for future applications.
title Gate-tunable subband degeneracy in semiconductor nanowires
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2404.02760