Leveraging both faces of polar semiconductor wafers for functional devices
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arXiv
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| Autori principali: | , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2024
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| _version_ | 1866912046868594688 |
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| author | van Deurzen, Len Kim, Eungkyun Pieczulewski, Naomi Zhang, Zexuan Feduniewicz-Zmuda, Anna Chlipala, Mikolaj Siekacz, Marcin Muller, David Xing, Huili Grace Jena, Debdeep Turski, Henryk |
| author_facet | van Deurzen, Len Kim, Eungkyun Pieczulewski, Naomi Zhang, Zexuan Feduniewicz-Zmuda, Anna Chlipala, Mikolaj Siekacz, Marcin Muller, David Xing, Huili Grace Jena, Debdeep Turski, Henryk |
| contents | Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium) face of gallium nitride has been used for photonic devices such as LEDs and lasers. Though the cation face has also been predominantly used for electronic devices, the anion (nitrogen) face has recently shown promise for high electron mobility transistors due to favorable polarization discontinuities. In this work we introduce dualtronics, showing that it is possible to make photonic devices on the cation face, and electronic devices on the anion face, of the same semiconductor wafer. This opens the possibility for leveraging both faces of polar semiconductors in a single structure, where electronic, photonic, and acoustic properties can be implemented on opposite faces of the same wafer, dramatically enhancing the functional capabilities of this revolutionary semiconductor family. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_03733 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | Leveraging both faces of polar semiconductor wafers for functional devices van Deurzen, Len Kim, Eungkyun Pieczulewski, Naomi Zhang, Zexuan Feduniewicz-Zmuda, Anna Chlipala, Mikolaj Siekacz, Marcin Muller, David Xing, Huili Grace Jena, Debdeep Turski, Henryk Applied Physics Materials Science Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium) face of gallium nitride has been used for photonic devices such as LEDs and lasers. Though the cation face has also been predominantly used for electronic devices, the anion (nitrogen) face has recently shown promise for high electron mobility transistors due to favorable polarization discontinuities. In this work we introduce dualtronics, showing that it is possible to make photonic devices on the cation face, and electronic devices on the anion face, of the same semiconductor wafer. This opens the possibility for leveraging both faces of polar semiconductors in a single structure, where electronic, photonic, and acoustic properties can be implemented on opposite faces of the same wafer, dramatically enhancing the functional capabilities of this revolutionary semiconductor family. |
| title | Leveraging both faces of polar semiconductor wafers for functional devices |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2404.03733 |