Cover Image

Leveraging both faces of polar semiconductor wafers for functional devices

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	van Deurzen, Len, Kim, Eungkyun, Pieczulewski, Naomi, Zhang, Zexuan, Feduniewicz-Zmuda, Anna, Chlipala, Mikolaj, Siekacz, Marcin, Muller, David, Xing, Huili Grace, Jena, Debdeep, Turski, Henryk
Format:	Preprint
Published:	2024
Subjects:	Applied Physics Materials Science
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates
by: Kim, Eungkyun, et al.
Published: (2025)

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates (Adv. Electron. Mater. 3/2026)
by: Eungkyun Kim, et al.
Published: (2026)

Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates
by: Singhal, Jashan, et al.
Published: (2022)

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes
by: Jimy Encomendero, et al.
Published: (2026)

Submicron Embedded Air/GaN Diffraction Gratings for Photonic Applications
by: Oliwia Gołyga, et al.
Published: (2024)

Epitaxial Sc$_x$Al$_{1-x}$N on GaN is a High K Dielectric
by: Casamento, Joseph, et al.
Published: (2021)

Edge emission from 265~nm UV-C LEDs grown by MBE on bulk AlN
by: Agrawal, Shivali, et al.
Published: (2025)

Electrochemical Etching for Seamless Micro-Transfer Printing of InGaN LEDs
by: Turski, Henryk
Published: (2025)

Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire
by: Ithepalli, Anand, et al.
Published: (2025)

Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
by: Chen, Yu-Hsin, et al.
Published: (2025)

Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
by: Cho, YongJin, et al.
Published: (2026)

A Compact Model for Polar Multiple-Channel Field Effect Transistors: A Case Study in III-V Nitride Semiconductors
by: Asteris, Aias, et al.
Published: (2025)

Generalized quantum limits of electrical contact resistance and thermal boundary resistance
by: Ho, Alice, et al.
Published: (2025)

Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
by: Dill, Joseph E., et al.
Published: (2024)

Quantum oscillations of holes in GaN
by: Chang, Chuan F. C., et al.
Published: (2025)

Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
by: Chen, Yu-Hsin, et al.
Published: (2026)

Model of collective violence—Structural and psychological antecedents of pogrom violence
by: Mikołaj Henryk Winiewski, et al.
Published: (2024)

High Mobility Multiple-Channel AlScN/GaN Heterostructures
by: Asteris, Aias, et al.
Published: (2025)

$γ$-phase Inclusions as Common Defects in Alloyed $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ and Doped $β$-Ga$_2$O$_3$ Films
by: Chang, Celesta S., et al.
Published: (2020)

Leap of Faith: Take the Plunge into a 21st-Century Conception of Learning
by: Zmuda, Allison
Published: (2009)

The End of an Era...Falling off a Cliff
by: Zmuda, Allison
Published: (2010)

CCSS: A Window and Fresh Air for Learning
by: Zmuda, Allison
Published: (2013)

What Does It Really Look Like when Students Are Learning in the Library Media Center?
by: Zmuda, Allison
Published: (2008)

Hitch Your Wagon to a Mission Statement
by: Zmuda, Allison
Published: (2007)

Where Does Your Authority Come From?: Empowering the Library Media Specialist as a True Partner in Student Achievement
by: Zmuda, Allison
Published: (2006)

Cryogenic Loss Limits in Microwave Epitaxial AlN Acoustic Resonators
by: Gulupalli, Hemant, et al.
Published: (2026)

Low Resistance Non-Alloyed Ohmic Contacts to High Al Composition n-type AlGaN
by: Dill, Joseph E., et al.
Published: (2025)

Investigation of entanglement in pure final polarization states from neutron-deuteron elastic ccattering and exclusive deuteron break
by: Witała, Henryk
Published: (2025)

Development of parametric material, energy, and emission inventories for wafer facrbication in the semiconductor industry
Published: (2003)

Ferroelectric AlBN Films by Molecular Beam Epitaxy
by: Savant, Chandrashekhar, et al.
Published: (2024)

Lorentzian Switching Dynamics in HZO-based FeMEMS Synapses for Neuromorphic Weight Storage
by: Jadhav, Shubham, et al.
Published: (2025)

Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
by: Nguyen, Thai-Son, et al.
Published: (2024)

Blue-ring and ring-width data from bristlecone pine (Pinus longaeva), White Mountains, California (900–2014 CE)
by: Siekacz, Liliana, et al.
Published: (2025)

Sustainable wafer-scale integration of epitaxial ZnO on silicon for piezoelectric devices
by: Sanchez-Fuentes, D., et al.
Published: (2025)

Dynamical Behavior of a Stacked Blue Laser Diode Consisting of Two Active Regions with Wide InGaN Quantum Wells and Two Tunnel Junctions
by: Jannina Tepaβ, et al.
Published: (2024)

Growth and characterization of single crystal cubic TaN and hexagonal Ta$_2$N films on c-plane Sapphire
by: Ithepalli, Anand, et al.
Published: (2025)

Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires
by: John, Philipp, et al.
Published: (2023)

Epitaxial high-K AlBN barrier GaN HEMTs
by: Savant, Chandrashekhar, et al.
Published: (2025)

Epitaxial AlBN/β‐Nb2N Ferroelectric/Superconductor Heterostructures
by: Chandrashekhar Savant, et al.
Published: (2024)

Smooth, Integrated Proofs of Cryptographic Constant Time for Nondeterministic Programs and Compilers
by: Conoly, Owen, et al.
Published: (2025)