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| Formato: | Preprint |
| Publicado: |
2024
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| Acceso en línea: | https://arxiv.org/abs/2404.03802 |
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| _version_ | 1866910545889722368 |
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| author | Miró-Zárate, Jorge Luis Cervantes-Sodi, Felipe Elias-Espinosa, Milton Carlos García-Trujillo, Skarleth Diliegros-Godines, Carolina Janani |
| author_facet | Miró-Zárate, Jorge Luis Cervantes-Sodi, Felipe Elias-Espinosa, Milton Carlos García-Trujillo, Skarleth Diliegros-Godines, Carolina Janani |
| contents | Incorporating a monolayer of WS$_2$ via interface engineering enhances the overall physical properties of a FAPbI3 perovskite based heterostructure. FAPbI$_3$/WS$_2$/TiO$_2$/ITO and FAPbI$_3$/TiO$_2$/ITO heterostructures were analyzed by UV-Vis spectroscopy, X-ray diffraction, scanning electron microscopy and atomic force microscopy. The configuration with WS$_2$ interlayer presents higher absorption in the visible region with a bandgap of {\aprox} 1.44 eV. WS$_2$ also enhances the deposition process of FAPbI$_3$, resulting in the formation of pure photoactive $α$-phase without the non-photoactive $δ$-phase nor residual plumbates. The incorporation of the monolayer improves the crystalline structure of the FAPbI$_3$, promoting a preferential growth in the [100] direction. The smooth surface of WS$_2$ favors a homogeneous morphology and an increase of the grain size to ~4.5 $μ$m, the largest reported for similar structures. Furthermore, the work function obtained lets us propose an enhance an adequate energy band alignment between FAPbI$_3$ and the n-type layers for the electron flux to the cathode. These findings strongly suggest that the interfacial coupling of FAPbI$_3$/WS$_2$ could be a promising candidate in photovoltaic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2404_03802 |
| institution | arXiv |
| publishDate | 2024 |
| record_format | arxiv |
| spellingShingle | WS$_2$ Monolayer Integration in a FAPbI$_3$-based Heterostructure Miró-Zárate, Jorge Luis Cervantes-Sodi, Felipe Elias-Espinosa, Milton Carlos García-Trujillo, Skarleth Diliegros-Godines, Carolina Janani Applied Physics Materials Science Incorporating a monolayer of WS$_2$ via interface engineering enhances the overall physical properties of a FAPbI3 perovskite based heterostructure. FAPbI$_3$/WS$_2$/TiO$_2$/ITO and FAPbI$_3$/TiO$_2$/ITO heterostructures were analyzed by UV-Vis spectroscopy, X-ray diffraction, scanning electron microscopy and atomic force microscopy. The configuration with WS$_2$ interlayer presents higher absorption in the visible region with a bandgap of {\aprox} 1.44 eV. WS$_2$ also enhances the deposition process of FAPbI$_3$, resulting in the formation of pure photoactive $α$-phase without the non-photoactive $δ$-phase nor residual plumbates. The incorporation of the monolayer improves the crystalline structure of the FAPbI$_3$, promoting a preferential growth in the [100] direction. The smooth surface of WS$_2$ favors a homogeneous morphology and an increase of the grain size to ~4.5 $μ$m, the largest reported for similar structures. Furthermore, the work function obtained lets us propose an enhance an adequate energy band alignment between FAPbI$_3$ and the n-type layers for the electron flux to the cathode. These findings strongly suggest that the interfacial coupling of FAPbI$_3$/WS$_2$ could be a promising candidate in photovoltaic applications. |
| title | WS$_2$ Monolayer Integration in a FAPbI$_3$-based Heterostructure |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2404.03802 |